SMX LM7905 5V NEGATIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS same as National Semiconductor LM7905, Fairchild Semiconductor LM7905, Fairchild Semiconductor LM7905CT, National Semiconductor LM7905, National Semiconductor LM7905 MWC, National Semiconductor LM7905C, National Semiconductor LM7905CT, Unisonic Technologies LM7905, Unisonic Technologies UTCLM7905 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Fairchild Semiconductor LM7905, National Semiconductor LM7905, Unisonic Technologies LM7905 SMX LM7905 5V NEGATIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS same as National Semiconductor LM7905, Fairchild Semiconductor LM7905, Fairchild Semiconductor LM7905CT, National Semiconductor LM7905, National Semiconductor LM7905 MWC, National Semiconductor LM7905C, National Semiconductor LM7905CT, Unisonic Technologies LM7905, Unisonic Technologies UTCLM7905 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Fairchild Semiconductor LM7905, National Semiconductor LM7905, Unisonic Technologies LM7905 REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=LM7905">INVENTORY /cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMXLM7905&c_item_1=">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMX LM7905 - BARE DIE GOLD CHIP TECHNOLOGY™ 5V NEGATIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS FEATURES APPLICATIONS VOLTAGE REGULATOR Output Current in Excess of 1A Output Voltages of -5V Internal Thermal Overload Protection Short Circuit Protection Output Transistor Safe Operating area Compensation In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS LM7905 LM7905 5V NEGATIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS SMXLM7905 5V NEGATIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS - PRODUCT DESCRIPTION The SMX 7905 series of three-terminal negative regulators are available in die formand with several fixed output voltages, making them useful in a wide range of applications. Each type employs internal currentlimiting, thermal shut-down and safe operating area protetion, making it essentially indestructible. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions. SCHEMATIC DIAGRAM LM7905 National Semiconductor LM7905 5V NEGATIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS LM7905 MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNITS Input Voltage Vin -35 V Operating Temperature Range Top 0 to +125 °C Storage Temperature Range Tstg 2 °C ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. LM7905 ELECTRICAL CHARACTERISTIC –55°C<Tj<+150°C, Vi = 14V, Io = 550mA, Ci = 0.33µF, Co= 0.1µF, unless otherwise specified PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Output Voltage Tj = 25 °C IO = 5mA to 1A, PO=15W VI = -7 to -20V VO 4.8 4.75 5.0 5.0 5.2 5.25 V Line Regulation Tj = 25 °C -7.0V<Vi<20V IO = 1A -8.0V<Vi<12V IO = 1A VI = -7.5 to -25V VI= -8 to -12V IO = 1A ΔVO 5 2 7 7 50 25 50 50 mV Load Regulation Tj = 25 °C 5.0mA<IO<1.5A 250mA<IO< 750mA ΔVO 10 3 100 50 mV Quiescent Current Tj = 25 °C Iq 3 6 mA Quiescent Current Change 8V<Vi<25V 5.0mA<Io<1.0A DIq 0.1 0.05 0.8 0.5 mA Output Noise Voltage Ta=25°C, 10Hz<f<100kHz Vn 40 µV Ripple Rejection f=120Hz, ΔVI = 10V ΔV1/ΔVo 54 60 dB Dropout Voltage Io=1.0A, Tj=25°C Vdo 2 V Short Circuit Current Tj = 25°C, Vj = -35V Ios 300 mA Temperature Coefficient of VD Io<5mA ΔVo/ΔT -0.4 mV/°C (NOTE 1)Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects have to be added to those due to the Io. The device should be subject to low duty cycle pulses ONLY. (NOTE 2)All characteristics are measured with a 0.22µF capacitor from input to ground and a 0.1µF capacitor from output to ground. All characteristics except noise voltage and ripple rejection ratio are measured using pulse techniques (tw<10ms, duty cycle<5%). Output voltage changes due to changes in internal temperature must be taken into account separately. SPICE MODEL CROSS REFERENCE PARTS GENERAL DIE INFORMATION Substrate Thickness [mils] Die size mils [mm] Bonding pads Backside metallization Silicon 10 78.74 x 78.74 ±1 [2 x 2] min 4x4 mils, 1µm thick, aluminium Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach. LM7905 DIE LAYOUT - MECHANICAL SPECIFICATIONS LM7905 DIE LAYOUT - MECHANICAL SPECIFICATIONS PAD # FUNCTION X(mils) X(mm) Y(mils) 1 GND 1.53 60.236 0.1 2 Input 0.725 28.543 1.71 3 Output 0.725 28.543 0.99 4 Output 1.7 66.929 0.745 SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000. LM7905 STANDARD PRODUCTS PRICE LIST USM PART # MINIMUM ORDER QUANTITY Waffle Packs U/P($) USM7905 $320/100pc. -WP $3.20 Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES /cgi-bin/getpdf.pl?part=SMXLM7905&idx=29">PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated: Display settings for best viewing: Current display settings: Page hits: Screen resolution: 1124x864 Screen resolution: Total site visits: Color quality: 16 bit Color quality: bit © 1990- SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission. Valid XHTML 1.0 Transitional by http://validator.w3.org

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semiconix semiconductor - where the future is today - gold chip technology SMX LM7905 - BARE DIE
GOLD CHIP TECHNOLOGY™ 5V NEGATIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS

FEATURES APPLICATIONS VOLTAGE REGULATOR
Output Current in Excess of 1A
Output Voltages of -5V
Internal Thermal Overload Protection
Short Circuit Protection
Output Transistor Safe
Operating area Compensation



In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS









LM7905 LM7905 5V NEGATIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS

SMXLM7905 5V NEGATIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS - PRODUCT DESCRIPTION
The SMX 7905 series of three-terminal negative regulators are available in die formand with several fixed output voltages, making them useful in a wide range of applications. Each type employs internal currentlimiting, thermal shut-down and safe operating area protetion, making it essentially indestructible.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS
Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions.


SCHEMATIC DIAGRAM
LM7905 National Semiconductor LM7905 5V NEGATIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS

LM7905 MAXIMUM RATINGS
PARAMETERSYMBOLVALUEUNITS
Input VoltageVin-35V
Operating Temperature RangeTop0 to +125°C
Storage Temperature RangeTstg2°C
ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

LM7905 ELECTRICAL CHARACTERISTIC
–55°C<Tj<+150°C, Vi = 14V, Io = 550mA, Ci = 0.33µF, Co= 0.1µF, unless otherwise specified
PARAMETERTEST CONDITIONSSYMBOLMINTYPMAXUNITS
Output VoltageTj = 25 °C IO = 5mA to 1A, PO=15W VI = -7 to -20VVO4.8 4.755.0 5.05.2 5.25V
Line RegulationTj = 25 °C -7.0V<Vi<20V IO = 1A -8.0V<Vi<12V IO = 1A VI = -7.5 to -25V VI= -8 to -12V IO = 1AΔVO5 2 7 750 25 50 50mV
Load RegulationTj = 25 °C 5.0mA<IO<1.5A 250mA<IO< 750mAΔVO10 3100 50mV
Quiescent CurrentTj = 25 °CIq36mA
Quiescent Current Change8V<Vi<25V 5.0mA<Io<1.0ADIq0.1 0.05 0.8 0.5mA
Output Noise VoltageTa=25°C, 10Hz<f<100kHzVn40µV
Ripple Rejectionf=120Hz, ΔVI = 10VΔV1/ΔVo5460dB
Dropout VoltageIo=1.0A, Tj=25°CVdo2V
Short Circuit CurrentTj = 25°C, Vj = -35VIos300mA
Temperature Coefficient of VD Io<5mAΔVo/ΔT-0.4mV/°C
(NOTE 1)Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects have to be added to those due to the Io. The device should be subject to low duty cycle pulses ONLY.
(NOTE 2)All characteristics are measured with a 0.22µF capacitor from input to ground and a 0.1µF capacitor from output to ground. All characteristics except noise voltage and ripple rejection ratio are measured using pulse techniques (tw<10ms, duty cycle<5%). Output voltage changes due to changes in internal temperature must be taken into account separately.

SPICE MODEL
Spice model pending.
 
CROSS REFERENCE PARTS
Fairchild Semiconductor LM7905, National Semiconductor LM7905, Unisonic Technologies LM7905

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Die size
mils [mm]
Bonding pads Backside metallization
Silicon 10 78.74 x 78.74 ±1
[2 x 2]
min 4x4 mils, 1µm thick, aluminium Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach.

LM7905 DIE LAYOUT - MECHANICAL SPECIFICATIONSLM7905 DIE LAYOUT - MECHANICAL SPECIFICATIONS
PAD #FUNCTIONX(mils)X(mm)Y(mils)
1GND1.5360.2360.1
2Input0.72528.5431.71
3Output0.72528.5430.99
4Output1.766.9290.745

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization.
For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au.
For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used.
In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended.
IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000.

LM7905 STANDARD PRODUCTS PRICE LIST
USM PART #MINIMUM ORDER QUANTITYWaffle PacksU/P($)
USM7905$320/100pc.-WP$3.20
Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.
List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting SEMICONIX SEMICONDUCTOR technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.

INSTANT QUOTE
Semiconix P/N Quantity E-mail    

DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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