SMX LT1117 800 mA LOW DROPOUT POSITIVE VOLTAGE REGULATOR same as Linear Technology LT1117, Linear Technology LT1117, Linear Technology LT1117CST-3.3, Linear Technology LT1117CST-2.85, Linear Technology LT1117CST, Linear Technology LT1117CM-5, Linear Technology LT1117CM-3.3, Linear Technology LT1117CM-2.85, Linear Technology LT1117CM, Linear Technology LT1117-5, Linear Technology LT1117-3.3, Linear Technology LT1117-2.85, Linear Technology LT1117CST-5 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Linear Technology LT1117 SMX LT1117 800 mA LOW DROPOUT POSITIVE VOLTAGE REGULATOR same as Linear Technology LT1117, Linear Technology LT1117, Linear Technology LT1117CST-3.3, Linear Technology LT1117CST-2.85, Linear Technology LT1117CST, Linear Technology LT1117CM-5, Linear Technology LT1117CM-3.3, Linear Technology LT1117CM-2.85, Linear Technology LT1117CM, Linear Technology LT1117-5, Linear Technology LT1117-3.3, Linear Technology LT1117-2.85, Linear Technology LT1117CST-5 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Linear Technology LT1117 REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=LT1117">INVENTORY /cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMXLT1117&c_item_1=">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMX LT1117 - BARE DIE GOLD CHIP TECHNOLOGY™ 800 mA LOW DROPOUT POSITIVE VOLTAGE REGULATOR FEATURES APPLICATIONS LDO VOLTAGE REGULATOR Adjustable or fixed output Output current of 800mA Low dropout 700mV at 800mA output current 0.015% line regulation 0.01% load regulation 100% thermal limit burn-in Fast transient response Remote sense In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS LT1117 LT1117 800 mA LOW DROPOUT POSITIVE VOLTAGE REGULATOR SMXLT1117 800 mA LOW DROPOUT POSITIVE VOLTAGE REGULATOR - PRODUCT DESCRIPTION The SMX LT 1117 series of positive adjustable and fixed regulators are designed to provide 800mA with higher efficiency than currently available devices. All internal circuitry is designed to operate down to 700 mV input to output differential and the dropout voltage is fully specified as a function of load current. Dropout voltage of the device is 100mV at light loads and rising to 700mV at maximum output current . A second low current input is required to achieve this dropout. The LT1117 can also be used as a single supply device (3 pin version). On-chip trimming adjust the reference voltage is 1%. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions. SCHEMATIC DIAGRAM LT1117 Linear Technology LT1117 800 mA LOW DROPOUT POSITIVE VOLTAGE REGULATOR LT1117 MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNITS Power Dissipation PD internally limited W Input Voltage VIN VPOWER VCONTROL 15 7 13 V Operating Junction Temperature Range Control section Power transistor Tj 0 to 125 0 to 150 °C Storage temperature Tstg -65 to 150 °C ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. LT1117 ELECTRICAL CHARACTERISTIC (Note1) ILOAD=0mA and TJ=25°C unless otherwise specified PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Reference Voltage * VCONTROL=2.75V, VPOWER=2V, ILOAD=10mA VCONTROL=2.75to 12V, VPOWER=3.3 to 5.5V, ILOAD=10 mA to 800mA 1.238 1.230 1.250 1.250 1.262 1.270 V Line regulation * ILOAD=10mA,(1.5V+VOUT)<VCONTROL<12V, 0.8<(VPOWER-VOUT)<5.5V - 0.04 0.2 % Load Regulation * VCONTROL=VOUT+2.5V,VPOWER=VOUT+0.8V, ILOAD=10mA to 800mA - 0.08 0.4 % Minimum Load Current (Note3) * VCONTROL=5V, VPOWER=3.3V,VADJ=0V - 1.7 5 mA Control Pin Current * VCONTROL=VOUT+2.5V,VPOWER=VOUT+0.8V, ILOAD=10mA to 800mA - 10 20 mA Adjust Pin Current * VCONTROL=2.75V, VPOWER=2.05V,ILOAD=10mA - 50 120 µA Current Limit * (VIN-VOUT)=3V 800 1100 - mA Ripple Rejection VCONTROL=VPOWER=VOUT+2.5V, VRIPPLE=1VP-P, ILOAD=400mA 60 75 - dB Thermal Regulation TA=25°C, 30ms pulse - 0.003 - %/W Control Input (Note4) (VCONTROL-VOUT) * VPOWER=VOUT+0.8V, ILOAD=10mA VPOWER=VOUT+0.8V,ILOAD=800mA - 1.00 1.15 1.15 1.30 V Power Input (VPOWER-VOUT) * VCONTROL=VOUT+2.5V,ILOAD=800mA - 0.55 0.7 V The * denotes the specifications which apply over the full temperature range. (NOTE 1) Unless otherwise specified VOUT=VSENSE, VADJ=0V. (NOTE 2) For adjustable device the minimum load current is the minimum current required to maintain regulation. (NOTE 3) The control pin current is the drive current required for the output transistor. This current will track output current with a ratio of about 1:100. (NOTE 4) The dropout voltage for the LT1117 is caused by either minimum control voltage or minimum power voltage.The specifications represent the minimum input/output voltage required to maintain 1% regulation. SPICE MODEL CROSS REFERENCE PARTS GENERAL DIE INFORMATION Substrate Thickness [mils] Die size mils [mm] Bonding pads Backside metallization Silicon 10 78.74 x 70.078 ±1 [2 x 1.78] min 5.512x5.512 mils, 1µm thick, aluminium Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach. LT1117 DIE LAYOUT - MECHANICAL SPECIFICATIONS LT1117 DIE LAYOUT - MECHANICAL SPECIFICATIONS PAD # FUNCTION X(mils) X(mm) Y(mils) 1 OUTPUT 3.937 0.1 62.63 2 OUTPUT 69.291 1.76 62.63 3 VPOWER 36.614 0.93 52.165 4 VCONTROL 36.614 0.93 43.11 5 SENSE 3.937 0.1 23.819 6 ADJUST 3.937 0.1 3.937 SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000. LT1117 STANDARD PRODUCTS PRICE LIST USM PART # MINIMUM ORDER QUANTITY Waffle Packs U/P($) USM LT1117 100pc -WP $3.20 Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES /cgi-bin/getpdf.pl?part=SMXLT1117&idx=14">PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated: Display settings for best viewing: Current display settings: Page hits: Screen resolution: 1124x864 Screen resolution: Total site visits: Color quality: 16 bit Color quality: bit © 1990- SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission. Valid XHTML 1.0 Transitional by http://validator.w3.org

REGISTER-LOGIN PRODUCTS CROSS REFERENCE INVENTORY REQUEST QUOTE ORDER ONLINE SITE MAP

   
semiconix semiconductor - where the future is today - gold chip technology SMX LT1117 - BARE DIE
GOLD CHIP TECHNOLOGY™ 800 mA LOW DROPOUT POSITIVE VOLTAGE REGULATOR

FEATURES APPLICATIONS LDO VOLTAGE REGULATOR
Adjustable or fixed output
Output current of 800mA
Low dropout
700mV at 800mA output current
0.015% line regulation
0.01% load regulation
100% thermal limit burn-in
Fast transient response
Remote sense
In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS









LT1117 LT1117 800 mA LOW DROPOUT POSITIVE VOLTAGE REGULATOR

SMXLT1117 800 mA LOW DROPOUT POSITIVE VOLTAGE REGULATOR - PRODUCT DESCRIPTION
The SMX LT 1117 series of positive adjustable and fixed regulators are designed to provide 800mA with higher efficiency than currently available devices. All internal circuitry is designed to operate down to 700 mV input to output differential and the dropout voltage is fully specified as a function of load current. Dropout voltage of the device is 100mV at light loads and rising to 700mV at maximum output current . A second low current input is required to achieve this dropout. The LT1117 can also be used as a single supply device (3 pin version). On-chip trimming adjust the reference voltage is 1%.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS
Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions.


SCHEMATIC DIAGRAM
LT1117 Linear Technology LT1117 800 mA LOW DROPOUT POSITIVE VOLTAGE REGULATOR

LT1117 MAXIMUM RATINGS
PARAMETERSYMBOLVALUEUNITS
Power DissipationPDinternally limitedW
Input VoltageVIN VPOWER VCONTROL15 7 13V
Operating Junction Temperature Range Control section Power transistorTj 0 to 125 0 to 150°C
Storage temperatureTstg-65 to 150°C
ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

LT1117 ELECTRICAL CHARACTERISTIC
(Note1) ILOAD=0mA and TJ=25°C unless otherwise specified
PARAMETERTEST CONDITIONSMINTYPMAXUNITS
Reference Voltage *VCONTROL=2.75V, VPOWER=2V, ILOAD=10mA VCONTROL=2.75to 12V, VPOWER=3.3 to 5.5V, ILOAD=10 mA to 800mA1.238 1.2301.250 1.2501.262 1.270V
Line regulation *ILOAD=10mA,(1.5V+VOUT)<VCONTROL<12V, 0.8<(VPOWER-VOUT)<5.5V-0.040.2%
Load Regulation *VCONTROL=VOUT+2.5V,VPOWER=VOUT+0.8V, ILOAD=10mA to 800mA-0.080.4%
Minimum Load Current (Note3) *VCONTROL=5V, VPOWER=3.3V,VADJ=0V-1.75mA
Control Pin Current *VCONTROL=VOUT+2.5V,VPOWER=VOUT+0.8V, ILOAD=10mA to 800mA-1020mA
Adjust Pin Current *VCONTROL=2.75V, VPOWER=2.05V,ILOAD=10mA-50120µA
Current Limit *(VIN-VOUT)=3V8001100-mA
Ripple RejectionVCONTROL=VPOWER=VOUT+2.5V, VRIPPLE=1VP-P, ILOAD=400mA6075-dB
Thermal RegulationTA=25°C, 30ms pulse-0.003-%/W
Control Input (Note4) (VCONTROL-VOUT) *VPOWER=VOUT+0.8V, ILOAD=10mA VPOWER=VOUT+0.8V,ILOAD=800mA-1.00 1.151.15 1.30V
Power Input (VPOWER-VOUT) *VCONTROL=VOUT+2.5V,ILOAD=800mA-0.550.7V
The * denotes the specifications which apply over the full temperature range.
(NOTE 1) Unless otherwise specified VOUT=VSENSE, VADJ=0V.
(NOTE 2) For adjustable device the minimum load current is the minimum current required to maintain regulation.
(NOTE 3) The control pin current is the drive current required for the output transistor. This current will track output current with a ratio of about 1:100.
(NOTE 4) The dropout voltage for the LT1117 is caused by either minimum control voltage or minimum power voltage.The specifications represent the minimum input/output voltage required to maintain 1% regulation.

SPICE MODEL
Spice model pending.
 
CROSS REFERENCE PARTS
Linear Technology LT1117

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Die size
mils [mm]
Bonding pads Backside metallization
Silicon 10 78.74 x 70.078 ±1
[2 x 1.78]
min 5.512x5.512 mils, 1µm thick, aluminium Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach.

LT1117 DIE LAYOUT - MECHANICAL SPECIFICATIONSLT1117 DIE LAYOUT - MECHANICAL SPECIFICATIONS
PAD #FUNCTIONX(mils)X(mm)Y(mils)
1OUTPUT3.9370.162.63
2OUTPUT69.2911.7662.63
3VPOWER36.6140.9352.165
4VCONTROL36.6140.9343.11
5SENSE3.9370.123.819
6ADJUST3.9370.13.937

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization.
For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au.
For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used.
In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended.
IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000.

LT1117 STANDARD PRODUCTS PRICE LIST
USM PART #MINIMUM ORDER QUANTITYWaffle PacksU/P($)
USM LT1117100pc-WP$3.20
Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.
List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting SEMICONIX SEMICONDUCTOR technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.

INSTANT QUOTE
Semiconix P/N Quantity E-mail    

DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

HOME PRODUCT TREE PACKAGES PDF VERSION SEARCH

SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com
Tel:(408)758-8694 Fax:(408)986-8027
SEMICONIX SEMICONDUCTOR
Last updated:July 06, 2009 Display settings for best viewing: Current display settings:
Page hits: 1 Screen resolution: 1124x864 Screen resolution:
Total site visits: Color quality: 16 bit Color quality: bit
© 1990-2024 SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission.