Low Drop Voltage Regulators: SMS2115S-2.5V FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR same as AMS Advanced Monolithic Systems AMS2115S-2.5V, AMS Advanced Monolithic Systems AMS2115S-2.5V PDIP8 AMS Advanced Monolithic Systems AMS2115S-2.5V manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor Low Drop Voltage Regulators: SMS2115S-2.5V FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR same as AMS Advanced Monolithic Systems AMS2115S-2.5V, AMS Advanced Monolithic Systems AMS2115S-2.5V PDIP8 AMS Advanced Monolithic Systems AMS2115S-2.5V manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. PDIP8 AMS Advanced Monolithic Systems AMS2115S-2.5V, AMS Advanced Monolithic Systems AMS2115S-2.5V AMS Advanced Monolithic Systems AMS2115S-2.5V,SMS2115S-2.5V,FAST Low Drop Voltage Regulators,,Low Drop Voltage Regulators, gold,chip,goldchip,gold chip technology, known good die, flip chip, bare die, wafer foundry, discrete semiconductors, integrated circuits, integrated passive components,gold metallization, aluminum, copper, system in package, SIP, silicon printed circuit board, silicon PCB, ceramic substrates, chip on board, flip chip, chip and gold wire Low Drop Voltage Regulators: SMS2115S-2.5V FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR same as AMS Advanced Monolithic Systems AMS2115S-2.5V, AMS Advanced Monolithic Systems AMS2115S-2.5V PDIP8 AMS Advanced Monolithic Systems AMS2115S-2.5V manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor Low Drop Voltage Regulators: SMS2115S-2.5V FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR same as AMS Advanced Monolithic Systems AMS2115S-2.5V, AMS Advanced Monolithic Systems AMS2115S-2.5V PDIP8 AMS Advanced Monolithic Systems AMS2115S-2.5V manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. PDIP8 AMS Advanced Monolithic Systems AMS2115S-2.5V, AMS Advanced Monolithic Systems AMS2115S-2.5V AMS Advanced Monolithic Systems AMS2115S-2.5V,SMS2115S-2.5V,FAST Low Drop Voltage Regulators,,Low Drop Voltage Regulators, gold,chip,goldchip,gold chip technology, known good die, flip chip, bare die, wafer foundry, discrete semiconductors, integrated circuits, integrated passive components,gold metallization, aluminum, copper, system in package, SIP, silicon printed circuit board, silicon PCB, ceramic substrates, chip on board, flip chip, chip and gold wire REGISTER-LOGIN PRODUCTS CROSS REFERENCE INVENTORY REQUEST QUOTE ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMS2115S-2.5V - nanoDFN GOLD CHIP TECHNOLOGY™ PDIP8 FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR FEATURES APPLICATIONS FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR - nDFN Fast Transient Response Dropout Voltage Defined by FET Used Very Tight Load Regulation High Side Sense Current Limit High reliability nanoDFN package Unique 10mils thin design Gold over nickel metallization RoHS compliant, Lead Free Compatible with surface mount, chip and wire and flip chip assembly process. Available packaged in PDIP8 Microprocessor Supplies Video Card Supplies Low Voltage Logic Supplies GTL Termination Chip on Board System in package SIP Hybrid Circuits SMS2115S-2.5V AMS2115S-2.5V FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR - PRODUCT DESCRIPTION SMS2115 is a single IC controller that drives an external N channel MOSFET as a source follower to produce a fast transient response, low dropout voltage regulator. The fast transient load performance is obtained by eliminating expensive tantalum or bulk electrolytic output capacitors in the most demanding modern microprocessor applications. Precision-trimmed adjustable and fixed output voltage versions accommodate any required microprocessor power supply voltage. By selecting the N-channel MOSFET RDS(ON) a very low dropout voltage can be achieved. A protection feature includes a high side current limit amplifier that activates a circuit to limit the FET gate drive. A shutdown pin turns off the gate drive and some internal circuits to reduce quiescent current. SMS2115 is offered in 8L SOIC package. Semiconix Low Drop Voltage Regulators Integrated Circuits series are available in very thin 0201 nanoDFN package. These products are ideal for surface mount, hybrid circuits and multi chip module applications. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions. ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Parameter Symbol Value Unit Input Voltage 20 V Storage Temperature -65 to +150 °C Control Section 0° C to 125 °C Power Transistor 0° C to 150 ° C Electrical Characteristics* at Name Symbol Test Conditions Value Unit Min. Typ. Max Output Voltage (Note 2) 2.475 2.5 2.52 V Line Regulation 10 V≤VIN≤20V 0.01 0.3 %/V Input Bias Current FB=VFB -3 -4 mA OUT Divider Current OUT=VOUT 0.5 1 mA Gate Output Swing Low I Gate=0mA 0.1 0.5 V IPOS + INEG Supply Current 3V≤IPOS≤20V 0.3 0.625 1 mA Current Limit Threshold Voltage 42 50 58 mV Current Limit Threshold Voltage, over the full operating temperature range. 37 50 63 mV Current Limit Threshold Voltage Line Regulation 3V≤IPOS≤20V -0.2 -0.5 %/V Shut Down Current (Input Shut Down  High) V Shutdown=2.0 V 5 8 mA Shut Down Input logic (Shut Down - Low) Low (Regulator On) 1.2 1.4 V Shut Down Input logic (Shut Down  High) High (Regulator Off) 2 1.5 V Shut Down Hysteresis From High To Low 150 mV Output Voltage TC (VOUT TC) 30 ppm/°C Reference Voltage TC (VREF TC) 30 ppm/°C Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Note 2: Line regulation is guaranteed up to the maximum input voltage. Note 3: XX represents all output voltages. SPICE MODEL AMS2115S-2.5V spice model pending. CROSS REFERENCE PARTS: AMS Advanced Monolithic Systems AMS2115S-2.5V, AMS Advanced Monolithic Systems AMS2115S-2.5V GENERAL DIE INFORMATION Substrate Thickness [mils] Package size Pads dimensions per drawing Backside Silicon Si 10±2 2.03x1.27mm [80x50mils] Gold Tin, Ni/Au, 5µm±1 thickness, solder reflow assembly Optional backside coating and/or marking. LAYOUT / DIMENSIONS / PAD LOCATIONS SMS2115S-2.5V AMS Advanced Monolithic Systems AMS2115S-2.5V, AMS Advanced Monolithic Systems AMS2115S-2.5V AMS Advanced Monolithic Systems AMS2115S-2.5V FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR SMS2115S-2.5V AMS2115S-2.5V FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR PDIP8 Package pinout Pin # Function 1 S/D 2 Vin 3 GND 4 FB 5 COMP 6 GATE 7 INEG 8 IPOS PDIP8 SMS2115S-2.5V AMS Advanced Monolithic Systems AMS2115S-2.5V, AMS Advanced Monolithic Systems AMS2115S-2.5V AMS Advanced Monolithic Systems AMS2115S-2.5V FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR nanoDFN SMS2115S-2.5V AMS Advanced Monolithic Systems AMS2115S-2.5V, AMS Advanced Monolithic Systems AMS2115S-2.5V AMS Advanced Monolithic Systems AMS2115S-2.5V FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR APPLICATION HINTS PIN FUNCTIONS S/D (Pin 1) This is a shutdown pin that provides GATE drive latchoff capability. The pin is also the input to a comparator referenced to VREF (1.25V). When the pin pulls above VREF, the comparator latches the gate drive to the external MOSFET off. The comparator typically has 150mV of hysteresis and the Shutdown pin can be pulled low to reset the latchoff function. This pin provides overvoltage protection or thermal shutdown protection when driven from various resistor divider schemes. S/D pin is clamped at 2.5V. VIN (Pin 2) This is the input supply for the IC that powers the majority of internal circuitry and provides sufficient gate drive compliance for the external N-channel MOSFET. The typical supply voltage is 12V with 4.5 mA of quiescent current. The maximum operating VIN is 20V and the MOSFET at max. IOUT + 1.6V (worst-case VIN to GATE output swing). GND (Pin 3) Analog Ground. This pin is also the negative sense terminal for the internal 1.25V reference. Connect external feedback divider networks that terminate to GND and frequency compensation components that terminate to GND directly to this pin for best regulation and performance. FB (Pin 4) Adjustable Version This is the inverting input of the error amplifier for the adjustable voltage AMS2115. The noninverting input is tied to the internal 1.25V reference. Input bias current for this pin is typically – 3 mA flowing out of the pin. This pin is normally tied to a resistor divider network to set output voltage. Tie the top of the external resistor divider directly to the output voltage for best regulation performance. OUT (Pin 4) Fixed Output Voltage This is the input of the error amplifier for the fixed voltage AMS2115-X. The fixed voltage parts contain a precision resistor divider network to set output voltage. The typical resistor divider current is 1 mA into the pin. Tie this pin directly to the output voltage for best regulation performance. COMP (Pin 5) This is the high impedance gain node of the error amplifier and is used for external frequency compensation. Frequency compensation is generally performed with a series RC network to ground. GATE (Pin 6) This is the output of the error amplifier that drives N-channel MOSFETs with up to 5000pf of “effective” gate capacitance. The typical open-loop output impedance is 2W. When using low input capacitance MOSFETs (,1500pF), a small gate resistor of 2W to 10W dampens high frequency ringing created by an LC resonance that is created by the MOSFET gate’s lead inductance and input capacitance. The GATE pin delivers up to 50mA for a few hundred nanoseconds when slewing the gate of the N-channel MOSFET in response to output load current transients. INEG (Pin 7) This is the negative sense terminal of the current limit amplifier. A small sense resistor is connected in series with the drain of the external MOSFET and is connected between the IPOS and INEG pins. A 50mV threshold voltage in conjunction with the sense resistor value sets the current limit level. The current sense resistor can be low value shut or can be made from a piece of PC board trace. If the current limit amplifier is not used tie the INEG and IPOS to power input voltage. This action disables the current limit amplifier. IPOS (Pin 8) This is the positive sense terminal of the current limit amplifier. Tie this pin directly to the main power input voltage from which the output voltage is regulated. This pin is also the input to a comparator that monitors the power input voltage and keeps the GATE voltage low until power input voltage is at least 1V. This prevents the external N Channel MOSFET to turn on before V power is on thus eliminating possible voltage spikes in the output voltage when powered up. Pinout Figure 1: Pinout Typical Application - Fixed voltage Figure 2: Typical Application - Fixed voltage Typical Application - Adjustable Voltage Figure 3: Typical Application - Adjustable Voltage SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE SMX-nDFN - NanoDFN package is a very thin (10mils) proprietary wafer level chip size package W-CSP technology developed by Semiconix. SMX-nDFN is the most efficient wafer level chip size package W-CSP designed for mixed surface mount and flip chip applications. The assembly process is same as for packaged surface mount components. The process consist of at least 3 steps; -screen print solder paste on the printed circuit board; -flip chip, align and attach to the tacky solder paste; -dry paste, reflow at >220°C, clean, etc. SMX-nDFN packages can also be attached with conductive silver epoxy in low temperature applications. The assembly process is also very simple and inexpensive consisting of 3 steps: - transfer a thin conductive epoxy layer onto the bonding pads; -align to substrate and attach; -cure silver epoxy and inspect. SMX-nDFN packages are available in many sizes with landing pads compatible with the industry standard CSP as well as many surface mount packages. STANDARD PRODUCTS ORDERING INFORMATION VERSION SMX P/N WAFFLE PACKS QUANTITY U/P($) TAPE / REEL MIN QUANTITY U/P($) nDFN-4 SMS2115S-2.5V-nDFN-4 -WP 1000 -TR 1000 nDFN-4 SMS2115S-2.5V-nDFN-4 -WP 5000 -TR 5000 PDIP8 SMS2115S-2.5V-PDIP8 -WP 1000 -TR 5000 PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice. LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times. CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met. CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page. SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts. SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated:January 01, 1970 Display settings for best viewing: Current display settings: Page hits: 1 Screen resolution: 1124x864 Screen resolution: Total site visits: 1 Color quality: 16 bit Color quality: bit © 1990-2009 SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission.

REGISTER-LOGIN PRODUCTS CROSS REFERENCE INVENTORY REQUEST QUOTE ORDER ONLINE SITE MAP

   
semiconix semiconductor - where the future is today - gold chip technology SMS2115S-2.5V - nanoDFN
GOLD CHIP TECHNOLOGY™ PDIP8 FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR

FEATURES APPLICATIONS FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR - nDFN
Fast Transient Response
Dropout Voltage Defined by FET Used
Very Tight Load Regulation
High Side Sense Current Limit
High reliability nanoDFN package
Unique 10mils thin design
Gold over nickel metallization
RoHS compliant, Lead Free
Compatible with surface mount, chip and wire and flip chip assembly process.
Available packaged in PDIP8
Microprocessor Supplies
Video Card Supplies
Low Voltage Logic Supplies
GTL Termination
Chip on Board
System in package SIP
Hybrid Circuits
SMS2115S-2.5V AMS2115S-2.5V FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR

FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR - PRODUCT DESCRIPTION
SMS2115 is a single IC controller that drives an external N channel MOSFET as a source follower to produce a fast transient response, low dropout voltage regulator. The fast transient load performance is obtained by eliminating expensive tantalum or bulk electrolytic output capacitors in the most demanding modern microprocessor applications. Precision-trimmed adjustable and fixed output voltage versions accommodate any required microprocessor power supply voltage. By selecting the N-channel MOSFET RDS(ON) a very low dropout voltage can be achieved. A protection feature includes a high side current limit amplifier that activates a circuit to limit the FET gate drive. A shutdown pin turns off the gate drive and some internal circuits to reduce quiescent current. SMS2115 is offered in 8L SOIC package.
Semiconix Low Drop Voltage Regulators Integrated Circuits series are available in very thin 0201 nanoDFN package.
These products are ideal for surface mount, hybrid circuits and multi chip module applications.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS
Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions.

ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)
Parameter Symbol Value Unit
Input Voltage 20 V
Storage Temperature -65 to +150 °C
Control Section 0° C to 125 °C
Power Transistor 0° C to 150 ° C

Electrical Characteristics* at
Name Symbol Test Conditions Value Unit
Min. Typ. Max
Output Voltage (Note 2) 2.475 2.5 2.52 V
Line Regulation 10 V≤VIN≤20V 0.01 0.3 %/V
Input Bias Current FB=VFB -3 -4 mA
OUT Divider Current OUT=VOUT 0.5 1 mA
Gate Output Swing Low I Gate=0mA 0.1 0.5 V
IPOS + INEG Supply Current 3V≤IPOS≤20V 0.3 0.625 1 mA
Current Limit Threshold Voltage 42 50 58 mV
Current Limit Threshold Voltage, over the full operating temperature range. 37 50 63 mV
Current Limit Threshold Voltage Line Regulation 3V≤IPOS≤20V -0.2 -0.5 %/V
Shut Down Current (Input Shut Down  High) V Shutdown=2.0 V 5 8 mA
Shut Down Input logic (Shut Down - Low) Low (Regulator On) 1.2 1.4 V
Shut Down Input logic (Shut Down  High) High (Regulator Off) 2 1.5 V
Shut Down Hysteresis From High To Low 150 mV
Output Voltage TC (VOUT TC) 30 ppm/°C
Reference Voltage TC (VREF TC) 30 ppm/°C
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. For guaranteed specifications and test conditions, see the
Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed.
Note 2: Line regulation is guaranteed up to the maximum input voltage.
Note 3: XX represents all output voltages.
SPICE MODEL
Spice model pending.
CROSS REFERENCE PARTS: AMS Advanced Monolithic Systems AMS2115S-2.5V, AMS Advanced Monolithic Systems AMS2115S-2.5V

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Package size Pads dimensions per drawing Backside
Silicon
Si
10±2 2.03x1.27mm
[80x50mils]
Gold Tin, Ni/Au, 5µm±1 thickness, solder reflow assembly Optional backside coating and/or marking.

LAYOUT / DIMENSIONS / PAD LOCATIONS
SMS2115S-2.5V AMS Advanced Monolithic Systems AMS2115S-2.5V, AMS Advanced Monolithic Systems AMS2115S-2.5V AMS Advanced Monolithic Systems AMS2115S-2.5V FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR SMS2115S-2.5V AMS2115S-2.5V FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR
PDIP8 Package pinout
Pin # Function
1 S/D
2 Vin
3 GND
4 FB
5 COMP
6 GATE
7 INEG
8 IPOS
PDIP8 SMS2115S-2.5V AMS Advanced Monolithic Systems AMS2115S-2.5V, AMS Advanced Monolithic Systems AMS2115S-2.5V AMS Advanced Monolithic Systems AMS2115S-2.5V FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR
nanoDFN SMS2115S-2.5V AMS Advanced Monolithic Systems AMS2115S-2.5V, AMS Advanced Monolithic Systems AMS2115S-2.5V AMS Advanced Monolithic Systems AMS2115S-2.5V FAST TRANSIENT RESPONSE LOW DROPOUT REGULATOR

APPLICATION HINTS

PIN FUNCTIONS


S/D (Pin 1)
This is a shutdown pin that provides GATE drive latchoff capability. The pin is also the input to a comparator referenced to VREF (1.25V). When the pin pulls above VREF, the comparator latches the gate drive to the external MOSFET off. The comparator typically has 150mV of hysteresis and the Shutdown pin can be pulled low to reset the latchoff function. This pin provides overvoltage protection or thermal shutdown protection when driven from various resistor divider schemes. S/D pin is clamped at 2.5V.

VIN (Pin 2)
This is the input supply for the IC that powers the majority of internal circuitry and provides sufficient gate drive compliance for the external N-channel MOSFET. The typical supply voltage is 12V with 4.5 mA of quiescent current. The maximum operating VIN is 20V and the MOSFET at max. IOUT + 1.6V (worst-case VIN to GATE output swing).

GND (Pin 3)
Analog Ground. This pin is also the negative sense terminal for the internal 1.25V reference. Connect external feedback divider networks that terminate to GND and frequency compensation components that terminate to GND directly to this pin for best regulation and performance.

FB (Pin 4) Adjustable Version
This is the inverting input of the error amplifier for the adjustable voltage AMS2115. The noninverting input is tied to the internal 1.25V reference. Input bias current for this pin is typically – 3 mA flowing out of the pin. This pin is normally tied to a resistor divider network to set output voltage. Tie the top of the external resistor divider directly to the output voltage for best regulation performance.

OUT (Pin 4) Fixed Output Voltage
This is the input of the error amplifier for the fixed voltage AMS2115-X. The fixed voltage parts contain a precision resistor divider network to set output voltage. The typical resistor divider current is 1 mA into the pin. Tie this pin directly to the output voltage for best regulation performance.

COMP (Pin 5)
This is the high impedance gain node of the error amplifier and is used for external frequency compensation. Frequency compensation is generally performed with a series RC network to ground.

GATE (Pin 6)
This is the output of the error amplifier that drives N-channel MOSFETs with up to 5000pf of “effective” gate capacitance. The typical open-loop output impedance is 2W. When using low input capacitance MOSFETs (,1500pF), a small gate resistor of 2W to 10W dampens high frequency ringing created by an LC resonance that is created by the MOSFET gate’s lead inductance and input capacitance. The GATE pin delivers up to 50mA for a few hundred nanoseconds when slewing the gate of the N-channel MOSFET in response to output load current transients.

INEG (Pin 7)
This is the negative sense terminal of the current limit amplifier. A small sense resistor is connected in series with the drain of the external MOSFET and is connected between the IPOS and INEG pins. A 50mV threshold voltage in conjunction with the sense resistor value sets the current limit level. The current sense resistor can be low value shut or can be made from a piece of PC board trace. If the current limit amplifier is not used tie the INEG and IPOS to power input voltage. This action disables the current limit amplifier.

IPOS (Pin 8)
This is the positive sense terminal of the current limit amplifier. Tie this pin directly to the main power input voltage from which the output voltage is regulated. This pin is also the input to a comparator that monitors the power input voltage and keeps the GATE voltage low until power input voltage is at least 1V. This prevents the external N Channel MOSFET to turn on before V power is on thus eliminating possible voltage spikes in the output voltage when powered up.

Pinout
Figure 1: Pinout
Typical Application - Fixed voltage
Figure 2: Typical Application - Fixed voltage
Typical Application - Adjustable Voltage
Figure 3: Typical Application - Adjustable Voltage

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
SMX-nDFN - NanoDFN package is a very thin (10mils) proprietary wafer level chip size package W-CSP technology developed by Semiconix.
SMX-nDFN is the most efficient wafer level chip size package W-CSP designed for mixed surface mount and flip chip applications. The assembly process is same as for packaged surface mount components. The process consist of at least 3 steps; -screen print solder paste on the printed circuit board; -flip chip, align and attach to the tacky solder paste; -dry paste, reflow at >220°C, clean, etc.
SMX-nDFN packages can also be attached with conductive silver epoxy in low temperature applications. The assembly process is also very simple and inexpensive consisting of 3 steps: - transfer a thin conductive epoxy layer onto the bonding pads; -align to substrate and attach; -cure silver epoxy and inspect. SMX-nDFN packages are available in many sizes with landing pads compatible with the industry standard CSP as well as many surface mount packages.

STANDARD PRODUCTS ORDERING INFORMATION

VERSION SMX P/N WAFFLE PACKS QUANTITY U/P($) TAPE / REEL MIN QUANTITY U/P($)
nDFN-4 SMS2115S-2.5V-nDFN-4 -WP 1000 -TR 1000
nDFN-4 SMS2115S-2.5V-nDFN-4 -WP 5000 -TR 5000
PDIP8 SMS2115S-2.5V-PDIP8 -WP 1000 -TR 5000

PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.
LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times.
CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met.
CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page.
SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.
ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts.
SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF.

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