Low Drop Voltage Regulators: SMS116N-X 100mA LOW DROPOUT VOLTAGE REGULATOR same as AMS Advanced Monolithic Systems AMS116N-X, AMS Advanced Monolithic Systems AMS116N-X TO92 AMS Advanced Monolithic Systems AMS116N-X manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor Low Drop Voltage Regulators: SMS116N-X 100mA LOW DROPOUT VOLTAGE REGULATOR same as AMS Advanced Monolithic Systems AMS116N-X, AMS Advanced Monolithic Systems AMS116N-X TO92 AMS Advanced Monolithic Systems AMS116N-X manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. TO92 AMS Advanced Monolithic Systems AMS116N-X, AMS Advanced Monolithic Systems AMS116N-X AMS Advanced Monolithic Systems AMS116N-X,SMS116N-X,100mA Low Drop Voltage Regulators,,Low Drop Voltage Regulators, gold,chip,goldchip,gold chip technology, known good die, flip chip, bare die, wafer foundry, discrete semiconductors, integrated circuits, integrated passive components,gold metallization, aluminum, copper, system in package, SIP, silicon printed circuit board, silicon PCB, ceramic substrates, chip on board, flip chip, chip and gold wire Low Drop Voltage Regulators: SMS116N-X 100mA LOW DROPOUT VOLTAGE REGULATOR same as AMS Advanced Monolithic Systems AMS116N-X, AMS Advanced Monolithic Systems AMS116N-X TO92 AMS Advanced Monolithic Systems AMS116N-X manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor Low Drop Voltage Regulators: SMS116N-X 100mA LOW DROPOUT VOLTAGE REGULATOR same as AMS Advanced Monolithic Systems AMS116N-X, AMS Advanced Monolithic Systems AMS116N-X TO92 AMS Advanced Monolithic Systems AMS116N-X manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. TO92 AMS Advanced Monolithic Systems AMS116N-X, AMS Advanced Monolithic Systems AMS116N-X AMS Advanced Monolithic Systems AMS116N-X,SMS116N-X,100mA Low Drop Voltage Regulators,,Low Drop Voltage Regulators, gold,chip,goldchip,gold chip technology, known good die, flip chip, bare die, wafer foundry, discrete semiconductors, integrated circuits, integrated passive components,gold metallization, aluminum, copper, system in package, SIP, silicon printed circuit board, silicon PCB, ceramic substrates, chip on board, flip chip, chip and gold wire REGISTER-LOGIN PRODUCTS CROSS REFERENCE INVENTORY REQUEST QUOTE ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMS116N-X - FLIP CHIP GOLD CHIP TECHNOLOGY™ 100mA LOW DROPOUT VOLTAGE REGULATOR FEATURES APPLICATIONS 100mA Low Drop Voltage Regulators - FLIP CHIP 5V Version Available Output Current of 100mA Very Low Quiescent Current Reverse Battery ProtectionPortable (Notebook) Computers Input-output Differential less than 0.6V Short Circuit protection Internal Thermal Overload Protection High reliability Unique new design in 0603 style case Gold metallization RoHS compliant, Lead Free Compatible with both chip and wire, flip chip and surface mount assembly. Battery Powered Systems Portable Consumer Equipment Cordless Telephones Portable (Notebook) Computers Portable Instrumentation Radio Control Systems Personal Communication Equipment Chip on Board System in package SIP Hybrid Circuits SMS116N-X AMS116N-X 100mA LOW DROPOUT VOLTAGE REGULATOR 100mA LOW DROPOUT VOLTAGE REGULATOR - PRODUCT DESCRIPTION SMS116 series consists of positive fixed voltage regulators ideally suited for use in battery-powered systems. These devices feature very low quiescent current of 1mA or less when supplying 10mA loads. This unique characteristic and the extremely low input -output differential required for proper regulation (0.2V for output currents of 10mA) make the SMS116 ideal to use for standby power systems. Like other regulators the SMS116 series also includes internal current limiting, thermal shutdown, and is able to withstand temporary power-up with mirror-image insertion. The SMS116 is offered in the 3-pin TO92 package and SOT-89 package. Flip Chip Low Drop Voltage Regulators Integrated Circuits series are available in die form in four different pad compositions: -FC, -GB, -GT and -AN. These products are ideal for high reliability hybrid circuits, multi chip module applications and surface mount applications. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions. ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Parameter Symbol Value Unit Power Dissipation Internally Limited Input Voltage 18 V Operating Voltage Range 2.5 to 16 V Storage Temperature -65 to +150 °C Operating Junction Temperature max.125 °C Electrical Characteristics* at IOUT=0 mA, TC=25°C unless otherwise noted Name Symbol Test Conditions Value Unit Min. Typ. Max Output Voltage (Note 2) VIN=VOUT+3V -3 3 % Line Regulation VIN=VOUT+3V to 14V 2 30 mV Load Regulation, (Notes 2, 3) 5mA≤IO≤100 mA 15 60 mV Dropout Voltage (VIN - VOUT) IO≤30 mA 80 150 mV Dropout Voltage (VIN - VOUT) IO=100 mA 170 330 mV Quiescent Current IO≤10 mA, VIN=VOUT+3V to 14V 400 1000 m A Ripple Rejection fO=120Hz 80 dB SPICE MODEL AMS116N-X spice model pending. CROSS REFERENCE PARTS: AMS Advanced Monolithic Systems AMS116N-X, AMS Advanced Monolithic Systems AMS116N-X GENERAL DIE INFORMATION Substrate Thickness [mils] Size LxW[mils] Bonding pads dimensions per drawing Backside Silicon Si 10±2 30x30±1 [0.76x0.76±0.025] Type Pad metal Thickness Assembly -FC TiW/Au 4µm±1 Wire bonding or Silver epoxy -GB TiW/Au 25µm±2.5 Thermosonic -GT Ti/Pt/AuSn 5µm±1 Reflow -AN Ni/Au 5µm±1 Solder reflow Optional backside coating and/or marking. LAYOUT / DIMENSIONS / PAD LOCATIONS Click to select process: -FC -GB -GT -AN SMS116N-X AMS Advanced Monolithic Systems AMS116N-X, AMS Advanced Monolithic Systems AMS116N-X AMS Advanced Monolithic Systems AMS116N-X 100mA LOW DROPOUT VOLTAGE REGULATOR SMS116N-X AMS116N-X 100mA LOW DROPOUT VOLTAGE REGULATOR wire bonding SMS116N-X AMS Advanced Monolithic Systems AMS116N-X, AMS Advanced Monolithic Systems AMS116N-X AMS Advanced Monolithic Systems AMS116N-X 100mA LOW DROPOUT VOLTAGE REGULATORthermosonic SMS116N-X AMS Advanced Monolithic Systems AMS116N-X, AMS Advanced Monolithic Systems AMS116N-X AMS Advanced Monolithic Systems AMS116N-X 100mA LOW DROPOUT VOLTAGE REGULATORthermal SMS116N-X AMS Advanced Monolithic Systems AMS116N-X, AMS Advanced Monolithic Systems AMS116N-X AMS Advanced Monolithic Systems AMS116N-X 100mA LOW DROPOUT VOLTAGE REGULATORsolder reflow SMS116N-X AMS Advanced Monolithic Systems AMS116N-X, AMS Advanced Monolithic Systems AMS116N-X AMS Advanced Monolithic Systems AMS116N-X 100mA LOW DROPOUT VOLTAGE REGULATOR APPLICATION HINTS APPLICATION HINTS Basic Voltage Regulator Circuit See figure 1. Input capacitor is required if regulator is located far from power supply filter. Output capacitor must be at least 100µF to maintain stability, it can be increased without bound to maintain regulation during transients and it should be located as close as possible to the regulator. This capacitor must be rated over the same operating temperature range like the regulator. The ESR of this capacitor is critical. Package Power Dissipation The package power dissipation is the level at which the thermal sensor monitoring the junction temperature is activated. The SMS116 shuts down when the junction temperature exceeds the limit of 150°C. The junction temperature rises as the difference between the input power and output power increases. The mounting pad configuration on the PCB, the board material, as well as the ambient temperature affect the rate of temperature rise. The junction temperature will be low, even if the power dissipation is high, when the mounting of the device has good thermal conductivity. When mounted on the recommended mounting pad (figure1) the power dissipation for the SOT-89 package is 600mW. For operation above 25°C derate the power dissipation at 4.8mW/°C. To determine the power dissipation for shutdown when mounted, attach the device on the PCB and increase the input-to-output voltage until the thermal protection circuit is activated. Calculate the power dissipation of the device by subtracting the output voltage from the input voltage and multiply by the output current. The measurements should allow for the ambient temperature of the PCB. The value obtained from PD/ (150°C - TA) is the derating factor. The PCB mounting pad should provide maximum thermal conductivity in order to maintain low device temperatures. As a general rule, the lower the temperature, the better the reliability of the device. The thermal resistance when the device is mounted is equal to: TJ = θJA x PD + TA The internal limit for junction temperature is 150°C. If the ambient temperature is 25°C, then: 150°C = θJA x PD + 25°C θJA = 125°C/ PD A simple way to determine PD is to calculate Vin x Iin when the output is shorted. As the temperature rises, the input gradually will decrease. The PD value obtained when the thermal equilibrium is reached, is the value that should be used. The maximum operating current is: Iout = ΔPD/(VIN(MAX) - VO) The range of usable currents can be found from the graph in figure 2. Procedure: 1. Find PD. 2. PD1 is calculated as PD x (0.8 - 0.9). 3. Plot PD1 against 25°C. 4. Connect PD1 to the point corresponding to the 150°C. External Capacitors The SMS116 series require an output capacitor for device stability. The value required depends on the application circuit and other factors. Because high frequency characteristics of electrolytic capacitors depend greatly on the type and even the manufacturer, the value of capacitance that works well with SMS116 for one brand or type may not necessary be sufficient with an electrolytic of different origin. Sometimes actual bench testing will be the only means to determine the proper capacitor type and value. To obtain stability in all general applications a high quality 100?F aluminum electrolytic or a 47?F tantalum electrolytic can be used. A critical characteristic of the electrolytic capacitors is their performance over temperature. The SMS116 is designed to operate to -40°C, but some electrolytics will freeze around -30°C therefore becoming ineffective. In such case the result is oscillation at the regulator output. For all application circuits where cold operation is necessary, the output capacitor must be rated to operate at the minimum temperature. In applications where the regulator junction temperature will never be lower than 25°C the output capacitor value can be reduced by a factor of two over the value required for the entire temperature range (47?F for a high quality aluminum or 22?F for a tantalum electrolytic capacitor). With higher output currents, the stability of SMS116 decreases. Considering the fact that in many applications the SMS116 is operated at only a few milliamps (or less) of output current, the output capacitor value can be reduced even further. For example, a circuit that is required to deliver a maximum of 10mA of output current from the regulator output will need an output capacitor of only half the value compared to the same regulator required to deliver the full output current of 100mA. As a general rule, with higher output voltages the value of the output capacitance decreases, since the internal loop gain is reduced. In order to determine the minimum value of the output capacitor, for an application circuit, the entire circuit including the capacitor should be bench tested at minimum operating temperatures and maximum operating currents. To maintain internal power dissipation and die heating to a minimum, the input voltage should be maintain at 0.6V above the output. Worst-case occurs just after input power is applied and before the die had the chance to heat up. After the minimum capacitance value has been found for the specific brand and type of electrolytic capacitor, the value should be doubled for actual use to cover for production variations both in the regulator and the capacitor. TYPICAL APPLICATIONS Voltage Regulator Circuit See figure 1. C1 is required if regulator is located far from power supply filter. C2 must be at least 100µF to maintain stability; it can be increased without bound to maintain regulation during transients and it should be located as close as possible to the regulator. This capacitor must be rated over the same operating temperature range like the regulator. The ESR of this capacitor is critical. Voltage Boost Circuit See figure 2. VOUT = VO+IQR Current Boost Circuit See figure 3. Current Regulator Circuit See figure 4. IO = (VO/R )+ IQ Basic voltage regulator circuit Figure 1: Basic voltage regulator circuit Power Dissipation Figure 2: Power Dissipation Voltage Boost Circuit Figure 3: Voltage Boost Circuit Current Boost Circuit Figure 4: Current Boost Circuit Current Regulator Circuit Figure 5: Current Regulator Circuit SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix flip chip components are designed for dry assembly processes as well as for processes that use adhesives, fluxes etc. Dry assembly process is an assembly process that does not use additional solders, fluxes or adhesives. Thermosonic wire bonding is a dry assembly process. Semiconix Flip Chip -FC series can be also used for thermosonic wire bonding. Semiconix Gold Bump -GB series are flip chips that are thermosonically attached to a circuit. Semiconix Gold Tin -GT series are flip chips with Au/Sn, 80/20 metallized pads. GT series can be attached to circuits by bringing the die in contact with a substrate which temperature is more than 280°C. Upon cooling bellow 280C, the die is firmly welded to the substrate. Flux less dry assembly is most reliable but is also most expensive because of thick gold bumps or expensive Au/Sn process. Semiconix -FC series is designed to be used for flip chip assembly with conductive silver epoxy. It is a simple and inexpensive process consisting of 3 steps: - transfer a thin conductive epoxy layer onto the bonding pads; -align to substrate and attach; -cure silver epoxy and inspect. Same procedure may be used also with -GB series in certain applications. Semiconix Gold/Nickel -AN series is the most efficient wafer level chip size package W-CSP designed for mixed surface mount and flip chip applications. The assembly process is same as for packaged surface mount components. The process consist of at least 3 steps; -screen print solder paste on the printed circuit board; -flip chip, align and attach to the tacky solder paste; -dry paste, reflow at T>220°C, clean, etc. Semiconix Flip Chip -AN series are available in many sizes with landing pads compatible with the industry standard CSP as well as surface mount packages. STANDARD PRODUCTS ORDERING INFORMATION VERSION SMX P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($) Flip chip SMS116N-X-FC -WP 1000 -FF 1000 Flip chip SMS116N-X-FC -WP 5000 -FF 5000 Gold Bump SMS116N-X-GB -WP 1000 -FF 1000 Gold Bump SMS116N-X-GB -WP 5000 -FF 5000 Gold-Tin SMS116N-X-GT -WP 1000 -FF 1000 Gold-Tin SMS116N-X-GT -WP 5000 -FF 5000 Gold/Nickel SMS116N-X-AN -WP 1000 -FF 1000 Gold/Nickel SMS116N-X-AN -WP 5000 -FF 5000 PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice. LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times. CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met. CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page. SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts. SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated:January 01, 1970 Display settings for best viewing: Current display settings: Page hits: 1 Screen resolution: 1124x864 Screen resolution: Total site visits: 1 Color quality: 16 bit Color quality: bit © 1990-2009 SEMICONIX SEMICONDUCTOR All rights reserved. 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semiconix semiconductor - where the future is today - gold chip technology SMS116N-X - FLIP CHIP
GOLD CHIP TECHNOLOGY™ 100mA LOW DROPOUT VOLTAGE REGULATOR

FEATURES APPLICATIONS 100mA Low Drop Voltage Regulators - FLIP CHIP
5V Version Available
Output Current of 100mA
Very Low Quiescent Current
Reverse Battery ProtectionPortable (Notebook) Computers
Input-output Differential less than 0.6V
Short Circuit protection
Internal Thermal Overload Protection
High reliability
Unique new design in 0603 style case
Gold metallization
RoHS compliant, Lead Free
Compatible with both chip and wire, flip chip and surface mount assembly.
Battery Powered Systems
Portable Consumer Equipment
Cordless Telephones
Portable (Notebook) Computers
Portable Instrumentation
Radio Control Systems
Personal Communication Equipment
Chip on Board
System in package SIP
Hybrid Circuits
SMS116N-X AMS116N-X 100mA LOW DROPOUT VOLTAGE REGULATOR

100mA LOW DROPOUT VOLTAGE REGULATOR - PRODUCT DESCRIPTION
SMS116 series consists of positive fixed voltage regulators ideally suited for use in battery-powered systems. These devices feature very low quiescent current of 1mA or less when supplying 10mA loads. This unique characteristic and the extremely low input -output differential required for proper regulation (0.2V for output currents of 10mA) make the SMS116 ideal to use for standby power systems. Like other regulators the SMS116 series also includes internal current limiting, thermal shutdown, and is able to withstand temporary power-up with mirror-image insertion. The SMS116 is offered in the 3-pin TO92 package and SOT-89 package.
Flip Chip Low Drop Voltage Regulators Integrated Circuits series are available in die form in four different pad compositions: -FC, -GB, -GT and -AN. These products are ideal for high reliability hybrid circuits, multi chip module applications and surface mount applications.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS
Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions.

ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)
Parameter Symbol Value Unit
Power Dissipation Internally Limited
Input Voltage 18 V
Operating Voltage Range 2.5 to 16 V
Storage Temperature -65 to +150 °C
Operating Junction Temperature max.125 °C

Electrical Characteristics* at IOUT=0 mA, TC=25°C unless otherwise noted
Name Symbol Test Conditions Value Unit
Min. Typ. Max
Output Voltage (Note 2) VIN=VOUT+3V -3 3 %
Line Regulation VIN=VOUT+3V to 14V 2 30 mV
Load Regulation, (Notes 2, 3) 5mA≤IO≤100 mA 15 60 mV
Dropout Voltage (VIN - VOUT) IO≤30 mA 80 150 mV
Dropout Voltage (VIN - VOUT) IO=100 mA 170 330 mV
Quiescent Current IO≤10 mA, VIN=VOUT+3V to 14V 400 1000 m A
Ripple Rejection fO=120Hz 80 dB
SPICE MODEL
Spice model pending.
CROSS REFERENCE PARTS: AMS Advanced Monolithic Systems AMS116N-X, AMS Advanced Monolithic Systems AMS116N-X

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Size
LxW[mils]
Bonding pads dimensions per drawing Backside
Silicon
Si
10±2 30x30±1
[0.76x0.76±0.025]
TypePad metalThicknessAssembly
-FCTiW/Au4µm±1Wire bonding or Silver epoxy
-GBTiW/Au25µm±2.5Thermosonic
-GTTi/Pt/AuSn5µm±1Reflow
-ANNi/Au5µm±1Solder reflow
Optional backside coating and/or marking.

LAYOUT / DIMENSIONS / PAD LOCATIONS
Click to select process: -FC -GB -GT -AN
SMS116N-X AMS Advanced Monolithic Systems AMS116N-X, AMS Advanced Monolithic Systems AMS116N-X AMS Advanced Monolithic Systems AMS116N-X 100mA LOW DROPOUT VOLTAGE REGULATOR SMS116N-X AMS116N-X 100mA LOW DROPOUT VOLTAGE REGULATOR
wire bonding SMS116N-X AMS Advanced Monolithic Systems AMS116N-X, AMS Advanced Monolithic Systems AMS116N-X AMS Advanced Monolithic Systems AMS116N-X 100mA LOW DROPOUT VOLTAGE REGULATOR

APPLICATION HINTS

APPLICATION HINTS 


Basic Voltage Regulator Circuit
See figure 1.
Input capacitor is required if regulator is located far from power supply filter.
Output capacitor must be at least 100µF to maintain stability, it can be increased without bound to maintain regulation during transients and it should be located as close as possible to the regulator. This capacitor must be rated over the same operating temperature range like the regulator. The ESR of this capacitor is critical.


Package Power Dissipation
The package power dissipation is the level at which the thermal sensor monitoring the junction temperature is activated. The SMS116 shuts down when the junction temperature exceeds the limit of 150°C. The junction temperature rises as the difference between the input power and output power increases. The mounting pad configuration on the PCB, the board material, as well as the ambient temperature affect the rate of temperature rise. The junction temperature will be low, even if the power dissipation is high, when the mounting of the device has good thermal conductivity. When mounted on the recommended mounting pad (figure1) the power dissipation for the SOT-89 package is 600mW. For operation above 25°C derate the power dissipation at 4.8mW/°C. To determine the power dissipation for shutdown when mounted, attach the device on the PCB and increase the input-to-output voltage until the thermal protection circuit is activated. Calculate the power dissipation of the device by subtracting the output voltage from the input voltage and multiply by the output current. The measurements should allow for the ambient temperature of the PCB. The value obtained from PD/ (150°C - TA) is the derating factor. The PCB mounting pad should provide maximum thermal conductivity in order to maintain low device temperatures. As a general rule, the lower the temperature, the better the reliability of the device.
The thermal resistance when the device is mounted is equal to:
TJ = θJA x PD + TA
The internal limit for junction temperature is 150°C. If the ambient temperature is 25°C, then:
150°C = θJA x PD + 25°C
θJA = 125°C/ PD
A simple way to determine PD is to calculate Vin x Iin when the output is shorted. As the temperature rises, the input gradually will decrease. The PD value obtained when the thermal equilibrium is reached, is the value that should be used.
The maximum operating current is:
Iout = ΔPD/(VIN(MAX) - VO)

The range of usable currents can be found from the graph in figure 2.
Procedure:
1. Find PD.
2. PD1 is calculated as PD x (0.8 - 0.9).
3. Plot PD1 against 25°C.
4. Connect PD1 to the point corresponding to the 150°C.


External Capacitors
The SMS116 series require an output capacitor for device stability. The value required depends on the application circuit and other factors. Because high frequency characteristics of electrolytic capacitors depend greatly on the type and even the manufacturer, the value of capacitance that works well with SMS116 for one brand or type may not necessary be sufficient with an electrolytic of different origin. Sometimes actual bench testing will be the only means to determine the proper capacitor type and value. To obtain stability in all general applications a high quality 100?F aluminum electrolytic or a 47?F tantalum electrolytic can be used. A critical characteristic of the electrolytic capacitors is their performance over temperature. The SMS116 is designed to operate to -40°C, but some electrolytics will freeze around -30°C therefore becoming ineffective. In such case the result is oscillation at the regulator output. For all application circuits where cold operation is necessary, the output capacitor must be rated to operate at the minimum temperature. In applications where the regulator junction temperature will never be lower than 25°C the output capacitor value can be reduced by a factor of two over the value required for the entire temperature range (47?F for a high quality aluminum or 22?F for a tantalum electrolytic capacitor). With higher output currents, the stability of SMS116 decreases. Considering the fact that in many applications the SMS116 is operated at only a few milliamps (or less) of output current, the output capacitor value can be reduced even further. For example, a circuit that is required to deliver a maximum of 10mA of output current from the regulator output will need an output capacitor of only half the value compared to the same regulator required to deliver the full output current of 100mA. As a general rule, with higher output voltages the value of the output capacitance decreases, since the internal loop gain is reduced. In order to determine the minimum value of the output capacitor, for an application circuit, the entire circuit including the capacitor should be bench tested at minimum operating temperatures and maximum operating currents. To maintain internal power dissipation and die heating to a minimum, the input voltage should be maintain at 0.6V above the output. Worst-case occurs just after input power is applied and before the die had the chance to heat up. After the minimum capacitance value has been found for the specific brand and type of electrolytic capacitor, the value should be doubled for actual use to cover for production variations both in the regulator and the capacitor.

TYPICAL APPLICATIONS

Voltage Regulator Circuit
See figure 1. C1 is required if regulator is located far from power supply filter.
C2 must be at least 100µF to maintain stability; it can be increased without bound to maintain regulation during transients and it should be located as close as possible to the regulator. This capacitor must be rated over the same operating temperature range like the regulator. The ESR of this capacitor is critical.

Voltage Boost Circuit
See figure 2.
VOUT = VO+IQR

Current Boost Circuit
See figure 3.

Current Regulator Circuit
See figure 4.
IO = (VO/R )+ IQ
Basic voltage regulator circuit
Figure 1: Basic voltage regulator circuit
Power Dissipation
Figure 2: Power Dissipation
Voltage Boost Circuit
Figure 3: Voltage Boost Circuit
Current Boost Circuit
Figure 4: Current Boost Circuit
Current Regulator Circuit
Figure 5: Current Regulator Circuit

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
Semiconix flip chip components are designed for dry assembly processes as well as for processes that use adhesives, fluxes etc. Dry assembly process is an assembly process that does not use additional solders, fluxes or adhesives. Thermosonic wire bonding is a dry assembly process. Semiconix Flip Chip -FC series can be also used for thermosonic wire bonding. Semiconix Gold Bump -GB series are flip chips that are thermosonically attached to a circuit. Semiconix Gold Tin -GT series are flip chips with Au/Sn, 80/20 metallized pads. GT series can be attached to circuits by bringing the die in contact with a substrate which temperature is more than 280°C. Upon cooling bellow 280C, the die is firmly welded to the substrate. Flux less dry assembly is most reliable but is also most expensive because of thick gold bumps or expensive Au/Sn process.
Semiconix -FC series is designed to be used for flip chip assembly with conductive silver epoxy. It is a simple and inexpensive process consisting of 3 steps: - transfer a thin conductive epoxy layer onto the bonding pads; -align to substrate and attach; -cure silver epoxy and inspect. Same procedure may be used also with -GB series in certain applications.
Semiconix Gold/Nickel -AN series is the most efficient wafer level chip size package W-CSP designed for mixed surface mount and flip chip applications. The assembly process is same as for packaged surface mount components. The process consist of at least 3 steps; -screen print solder paste on the printed circuit board; -flip chip, align and attach to the tacky solder paste; -dry paste, reflow at T>220°C, clean, etc.
Semiconix Flip Chip -AN series are available in many sizes with landing pads compatible with the industry standard CSP as well as surface mount packages.

STANDARD PRODUCTS ORDERING INFORMATION

VERSION SMX P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($)
Flip chip SMS116N-X-FC -WP 1000 -FF 1000
Flip chip SMS116N-X-FC -WP 5000 -FF 5000
Gold Bump SMS116N-X-GB -WP 1000 -FF 1000
Gold Bump SMS116N-X-GB -WP 5000 -FF 5000
Gold-Tin SMS116N-X-GT -WP 1000 -FF 1000
Gold-Tin SMS116N-X-GT -WP 5000 -FF 5000
Gold/Nickel SMS116N-X-AN -WP 1000 -FF 1000
Gold/Nickel SMS116N-X-AN -WP 5000 -FF 5000

PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.
LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times.
CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met.
CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page.
SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.
ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts.
SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF.

INSTANT QUOTE
Semiconix P/N Quantity E-mail    

DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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