Low Drop Voltage Regulators: SMS2942BS HIGH VOLTAGE LOW DROPOUT REGULATOR same as AMS Advanced Monolithic Systems AMS2942BS SOIC8 AMS Advanced Monolithic Systems AMS2942BS manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor Low Drop Voltage Regulators: SMS2942BS HIGH VOLTAGE LOW DROPOUT REGULATOR same as AMS Advanced Monolithic Systems AMS2942BS SOIC8 AMS Advanced Monolithic Systems AMS2942BS manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. SOIC8 AMS Advanced Monolithic Systems AMS2942BS AMS Advanced Monolithic Systems AMS2942BS,SMS2942BS,HIGH Low Drop Voltage Regulators,,Low Drop Voltage Regulators, gold,chip,goldchip,gold chip technology, known good die, flip chip, bare die, wafer foundry, discrete semiconductors, integrated circuits, integrated passive components,gold metallization, aluminum, copper, system in package, SIP, silicon printed circuit board, silicon PCB, ceramic substrates, chip on board, flip chip, chip and gold wire Low Drop Voltage Regulators: SMS2942BS HIGH VOLTAGE LOW DROPOUT REGULATOR same as AMS Advanced Monolithic Systems AMS2942BS SOIC8 AMS Advanced Monolithic Systems AMS2942BS manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor Low Drop Voltage Regulators: SMS2942BS HIGH VOLTAGE LOW DROPOUT REGULATOR same as AMS Advanced Monolithic Systems AMS2942BS SOIC8 AMS Advanced Monolithic Systems AMS2942BS manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. SOIC8 AMS Advanced Monolithic Systems AMS2942BS AMS Advanced Monolithic Systems AMS2942BS,SMS2942BS,HIGH Low Drop Voltage Regulators,,Low Drop Voltage Regulators, gold,chip,goldchip,gold chip technology, known good die, flip chip, bare die, wafer foundry, discrete semiconductors, integrated circuits, integrated passive components,gold metallization, aluminum, copper, system in package, SIP, silicon printed circuit board, silicon PCB, ceramic substrates, chip on board, flip chip, chip and gold wire REGISTER-LOGIN PRODUCTS CROSS REFERENCE INVENTORY REQUEST QUOTE ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMS2942BS - nanoDFN GOLD CHIP TECHNOLOGY™ SOIC8 HIGH VOLTAGE LOW DROPOUT REGULATOR FEATURES APPLICATIONS HIGH Low Drop Voltage Regulators - nDFN Adjustable from 1.23V to 42V High Accuracy Output Voltage Extremely Low Quiescent Current Low Dropout Voltage Tight Load and Line Regulation Low Temperature Coefficient Current and Thermal Protection Unregulated DC Positive Transients 60V Error Flag Warning of Voltage Output Dropout Logic Controlled Electronic Shutdown High reliability nanoDFN package Unique 10mils thin design Gold over nickel metallization RoHS compliant, Lead Free Compatible with surface mount, chip and wire and flip chip assembly process. Available packaged in SOIC8 Portable Consumer Equipment Portable Consumer Equipment Portable Consumer Equipment Portable Consumer Equipment Portable Consumer Equipment Portable Consumer Equipment Portable Consumer Equipment Chip on Board System in package SIP Hybrid Circuits SMS2942BS AMS2942BS HIGH VOLTAGE LOW DROPOUT REGULATOR HIGH VOLTAGE LOW DROPOUT REGULATOR - PRODUCT DESCRIPTION SMS2942 are micro power voltage regulators ideally suited for use with high voltage powered systems. This device feature very low quiescent current (typ.130µA), and very low dropout voltage (typ.45mV at light loads and 380mV at 100mA). The quiescent current increases only slightly in dropout. The SMS2942 has positive transient protection up to 60V and can survive unregulated input transient up to 20V below ground. SMS2942 is designed with a tight initial voltage reference tolerance, excellent load and line regulation (typ. 0.05%), and a very low output voltage temperature coefficient, making these devices useful as a low-power voltage regulator in telephone applications, using the telephone line as a power source. The SMS2942 is available in a special 8-pin plastic SOIC in which pin 2 and 3 are fused together with the package paddle serving also as heat sink. An error flag output warns of a low output voltage, often due to failing voltage on input line. A logic-compatible shutdown input is available, which enables the regulator to be switched on and off. The output voltage can be programmed from 1.23V to 42V with an external pair of resistors. Semiconix Low Drop Voltage Regulators Integrated Circuits series are available in very thin 0201 nanoDFN package. These products are ideal for surface mount, hybrid circuits and multi chip module applications. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions. ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Parameter Symbol Value Unit Power Dissipation Internally limited Input Voltage -0.3 to +50 V Storage Temperature -65 to +150 °C Operating Junction Temperature -40 to +125 °C Electrical Characteristics at VS=VOUT+1V, TA=25°C, unless otherwise specified. Name Symbol Test Conditions Value Unit Min. Typ. Max Reference Voltage 1.21 1.235 1.26 V Reference Voltage over the full operating temperature range. Note 7) 1.185 1.285 V Line Regulation 6V≤VIN≤45V (Note 13) 0.1 0.4 % Load Regulation, (Notes 2, 3) 100 µA≤IL≤100 mA 0.1 0.4 % Dropout Voltage (VIN - VOUT) IL=100µ A 50 80 mV Dropout Voltage (VIN - VOUT) IL=100 mA 380 450 mV Current Limit VOUT=0 160 200 mA Output Voltage TC (VOUT TC) (Note 10) (Note 4) 50 ppm/°C Reference Voltage TC (VREF TC) 50 ppm/°C Control Pin Current IL=100 µA 120 180 m A Ground Pin Current IL=100 mA 8 12 mA Output Noise Voltage 10Hz to 100KHz,CL=1µF, (Bypass=0.01 µF pins 7 to 1) 430 µV rms Output Noise Voltage 10Hz to 100KHz,CL=200 µF, (Bypass=0.01 µF pins 7 to 1) 160 µV rms Output Noise Voltage 10Hz to 100KHz,CL=13.3 µF, (Bypass=0.01 µF pins 7 to 1) 100 µV rms Feedback Pin Bias Current 40 80 nA Feedback Pin Bias Current Temperature Coefficient 0.1 nA/°C Output Leakage Current VOH=42V 0.05 2 m A Output Low Voltage VIN=4.5V, IOL=400µA 150 250 mV Upper Threshold Voltage (Note 6) 40 60 mV Lower Threshold Voltage (Note 6) 75 95 mV Hysteresis (Note 6) 15 mV Input logic Voltage Low (Regulator ON) 1.3 0.7 V Input logic Voltage High (Regulator OFF) 2.5 V Shutdown Pin Input Current VS=2.5V (Note 3) 30 60 m A Shutdown Pin Input Current VS=42V (Note 3) 600 850 m A Regulator Output Current in Shutdown (Note 3,9) 15 50 m A Thermal Regulation (Note 11) 0.05 0.2 %/W Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the Electrical Characteristics tables. Note 2: Unless otherwise specified all limits guaranteed for VIN = ( VONOM +1)V, IL = 100 µA and CL = 1 µF. Limits appearing in boldface type apply over the entire junction temperature range for operation. Limits appearing in normal type apply for TA = TJ = 25°C, VSHUTDOWN ≤ 0.8V. Note 3: Guaranteed and 100% production tested. Note 4: Guaranteed but not 100% production tested. These limits are not used to calculate outgoing AQL levels. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 100 mV below its nominal value measured at 1V differential. At very low values of programmed output voltage, the minimum input supply voltage of 2V ( 2.3V over temperature) must be taken into account. Note 6: Comparator thresholds are expressed in terms of a voltage differential at the feedback terminal below the nominal reference voltage measured at VIN = ( VONOM +1)V. To express these thresholds in terms of output voltage change, multiply by the error amplifier gain = Vout/Vref = (R1 + R2)/R2. For example, at a programmed output voltage of 5V, the error output is guaranteed to go low when the output drops by 95 mV x 5V/1.235 = 384 mV. Thresholds remain constant as a percent of Vout as Vout is varied, with the dropout warning occurring at typically 5% below nominal, 7.5% guaranteed. Note 7: Vref ≤Vout ≤ (Vin - 1V), 2.3 ≤Vin≤42V, 100µA≤IL≤ 100 mA, TJ ≤ TJMAX. Note 8: The junction-to-ambient thermal resistance is 120°C/W for the molded plastic SO-8 (S), when the package is soldered directly to the PCB. Note 9: VSHUTDOWN ≥ 2.5V, VIN ≤ 42V, VOUT =0. Note 10: Output or reference voltage temperature coefficients defined as the worst case voltage change divided by the total temperature range. Note 11: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a 50mA load pulse at VIN =42V (1.25W pulse) for T =10 ms. Note 12: Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output voltage due to heating effects are covered under the specification for thermal regulation. Note 13: Line regulation is tested at 150°C for IL = 1 mA. For IL = 100 µA and TJ = 125°C, line regulation is guaranteed by design to 0.2%. See typical performance characteristics for line regulation versus temperature and load current. SPICE MODEL AMS2942BS spice model pending. CROSS REFERENCE PARTS: AMS Advanced Monolithic Systems AMS2942BS GENERAL DIE INFORMATION Substrate Thickness [mils] Package size Pads dimensions per drawing Backside Silicon Si 10±2 3.81x1.52mm [150x60mils] Gold Tin, Ni/Au, 5µm±1 thickness, solder reflow assembly Optional backside coating and/or marking. LAYOUT / DIMENSIONS / PAD LOCATIONS SMS2942BS AMS Advanced Monolithic Systems AMS2942BS AMS Advanced Monolithic Systems AMS2942BS HIGH VOLTAGE LOW DROPOUT REGULATOR SMS2942BS AMS2942BS HIGH VOLTAGE LOW DROPOUT REGULATOR SOIC8 Package pinout Pin # Function 1 Out 2 GND 3 GND 4 On/Off 5 Error 6 N/C 7 Feedback 8 In SOIC8 SMS2942BS AMS Advanced Monolithic Systems AMS2942BS AMS Advanced Monolithic Systems AMS2942BS HIGH VOLTAGE LOW DROPOUT REGULATOR nanoDFN SMS2942BS AMS Advanced Monolithic Systems AMS2942BS AMS Advanced Monolithic Systems AMS2942BS HIGH VOLTAGE LOW DROPOUT REGULATOR APPLICATION HINTS APPLICATION HINTS External Capacitors A 1.0 µF or greater capacitor is required between output and ground for stability at output voltages of 5V or more. At lower output voltages, more capacitance is required. Without this capacitor the part will oscillate. Most types of tantalum or aluminum electrolytic works fine here; even film types work but are not recommended for reasons of cost. Many aluminum types have electrolytes that freeze at about -30°C, so solid tantalums are recommended for operation below -25°C. The important parameters of the capacitor are an ESR of about 5 . or less and resonant frequency above 500 kHz parameters in the value of the capacitor. The value of this capacitor may be increased without limit. At lower values of output current, less output capacitance is required for stability. The capacitor can be reduced to 0.33 µF for currents below 10 mA or 0.1 µF for currents below 1 mA. At voltages below 5V the error amplifier operates at lower gains so that more output capacitance is needed. For the worst-case situation of a 100mA load at 1.23V output (Output shorted to Feedback) a 3.3µF (or greater) capacitor should be used. A 1µF tantalum or aluminum electrolytic capacitor should be placed between input to ground if there is more than 10 inches of wire between the input and the AC filter capacitor or if a battery is used as the input. Stray capacitance to Feedback terminal can cause instability. This may especially be a problem when using a higher value of external resistors to set the output voltage. Adding a 100pF capacitor between Output and Feedback and increasing the output capacitor to at least 3.3 µF will fix this problem. Error Detection Comparator Output The comparator produces a logic low output whenever the output falls out of regulation by more than approximately 5%. This figure is the comparator’s built-in offset of about 60 mV divided by the 1.235 reference voltage. This trip level remains 5% below normal regardless of the programmed output voltage. For example, the error flag trip level is typically 4.75V for a 5V output or 11.4V for a 12V output. The out of regulation condition may be due either to low input voltage, current limiting, or thermal limiting. Figure 2 gives a timing diagram depicting the ERROR signal and the regulator output voltage as the AMS2942 input is ramped up and down. Since the dropout voltage is load dependent the input voltage trip point will vary with the load current. The output voltage trip point does not vary with load. The error comparator has an open­collector output which requires an external pullup resistor. This resistor may be returned to the output or some other supply voltage depending on system requirements. In determining a value for this resistor, note that the output is rated to sink 400µA. Suggested values range from 100K to 1M. The resistor is not required if error flag terminal is unused. Setting the Output Voltage The AMS2942 it may be programmed for any output voltage between its 1.235V reference and its 42V maximum rating. As seen in Figure 1, an external pair of resistors is required. The complete equation for the output voltage is: Vout = VREF × (1 + R1/ R2)+ IfbR1 where VREF is the nominal 1.235 reference voltage and IFB is the feedback pin bias current, nominally -20nA. The minimum recommended load current of 1µA forces an upper limit of 1.2 M. on value of R2, if the regulator must work with no load (a condition often found in CMOS in standby) IFB will produce a 2% typical error in VOUT which may be eliminated at room temperature by trimming R1. For better accuracy, choosing R2 = 100k reduces this error to 0.17%. Drive with TTL-high to shut down. Ground or leave if shutdown feature is not used. Note: Pins 2 and 6 are left open. Reducing Output Noise In reference applications it may be an advantageous to reduce the AC noise present at the output. One method is to reduce the regulator bandwidth by increasing the size of the output capacitor. Noise could be reduced fourfold by a bypass capacitor across R1, since it reduces the high frequency gain from 4 to unity. Pick CBYPASS=1/2piR1 × 200 Hz or about 0.01 µF. When doing this, the output capacitor must be increased to 3.3 µF to maintain stability. These changes reduce the output noise from 430 µV to 100 µV rms for a 100 kHz bandwidth at 5V output. With the bypass capacitor added, noise no longer scales with output voltage so that improvements are more dramatic at higher output voltages. Typical Application - Adjustable Output Figure 1: Typical Application - Adjustable Output Error Output Timing Figure 2: Error Output Timing SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE SMX-nDFN - NanoDFN package is a very thin (10mils) proprietary wafer level chip size package W-CSP technology developed by Semiconix. SMX-nDFN is the most efficient wafer level chip size package W-CSP designed for mixed surface mount and flip chip applications. The assembly process is same as for packaged surface mount components. The process consist of at least 3 steps; -screen print solder paste on the printed circuit board; -flip chip, align and attach to the tacky solder paste; -dry paste, reflow at >220°C, clean, etc. SMX-nDFN packages can also be attached with conductive silver epoxy in low temperature applications. The assembly process is also very simple and inexpensive consisting of 3 steps: - transfer a thin conductive epoxy layer onto the bonding pads; -align to substrate and attach; -cure silver epoxy and inspect. SMX-nDFN packages are available in many sizes with landing pads compatible with the industry standard CSP as well as many surface mount packages. STANDARD PRODUCTS ORDERING INFORMATION VERSION SMX P/N WAFFLE PACKS QUANTITY U/P($) TAPE / REEL MIN QUANTITY U/P($) nDFN-4 SMS2942BS-nDFN-4 -WP 1000 -TR 1000 nDFN-4 SMS2942BS-nDFN-4 -WP 5000 -TR 5000 SOIC8 SMS2942BS-SOIC8 -WP 1000 -TR 5000 PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice. LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times. CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met. CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page. SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts. SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated:January 01, 1970 Display settings for best viewing: Current display settings: Page hits: 1 Screen resolution: 1124x864 Screen resolution: Total site visits: 1 Color quality: 16 bit Color quality: bit © 1990-2009 SEMICONIX SEMICONDUCTOR All rights reserved. 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REGISTER-LOGIN PRODUCTS CROSS REFERENCE INVENTORY REQUEST QUOTE ORDER ONLINE SITE MAP

   
semiconix semiconductor - where the future is today - gold chip technology SMS2942BS - nanoDFN
GOLD CHIP TECHNOLOGY™ SOIC8 HIGH VOLTAGE LOW DROPOUT REGULATOR

FEATURES APPLICATIONS HIGH Low Drop Voltage Regulators - nDFN
Adjustable from 1.23V to 42V
High Accuracy Output Voltage
Extremely Low Quiescent Current
Low Dropout Voltage
Tight Load and Line Regulation
Low Temperature Coefficient
Current and Thermal Protection
Unregulated DC Positive Transients 60V
Error Flag Warning of Voltage Output Dropout
Logic Controlled Electronic Shutdown
High reliability nanoDFN package
Unique 10mils thin design
Gold over nickel metallization
RoHS compliant, Lead Free
Compatible with surface mount, chip and wire and flip chip assembly process.
Available packaged in SOIC8
Portable Consumer Equipment
Portable Consumer Equipment
Portable Consumer Equipment
Portable Consumer Equipment
Portable Consumer Equipment
Portable Consumer Equipment
Portable Consumer Equipment
Chip on Board
System in package SIP
Hybrid Circuits
SMS2942BS AMS2942BS HIGH VOLTAGE LOW DROPOUT REGULATOR

HIGH VOLTAGE LOW DROPOUT REGULATOR - PRODUCT DESCRIPTION
SMS2942 are micro power voltage regulators ideally suited for use with high voltage powered systems. This device feature very low quiescent current (typ.130µA), and very low dropout voltage (typ.45mV at light loads and 380mV at 100mA). The quiescent current increases only slightly in dropout. The SMS2942 has positive transient protection up to 60V and can survive unregulated input transient up to 20V below ground. SMS2942 is designed with a tight initial voltage reference tolerance, excellent load and line regulation (typ. 0.05%), and a very low output voltage temperature coefficient, making these devices useful as a low-power voltage regulator in telephone applications, using the telephone line as a power source. The SMS2942 is available in a special 8-pin plastic SOIC in which pin 2 and 3 are fused together with the package paddle serving also as heat sink. An error flag output warns of a low output voltage, often due to failing voltage on input line. A logic-compatible shutdown input is available, which enables the regulator to be switched on and off. The output voltage can be programmed from 1.23V to 42V with an external pair of resistors.
Semiconix Low Drop Voltage Regulators Integrated Circuits series are available in very thin 0201 nanoDFN package.
These products are ideal for surface mount, hybrid circuits and multi chip module applications.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS
Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions.

ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)
Parameter Symbol Value Unit
Power Dissipation Internally limited
Input Voltage -0.3 to +50 V
Storage Temperature -65 to +150 °C
Operating Junction Temperature -40 to +125 °C

Electrical Characteristics at VS=VOUT+1V, TA=25°C, unless otherwise specified.
Name Symbol Test Conditions Value Unit
Min. Typ. Max
Reference Voltage 1.21 1.235 1.26 V
Reference Voltage over the full operating temperature range. Note 7) 1.185 1.285 V
Line Regulation 6V≤VIN≤45V (Note 13) 0.1 0.4 %
Load Regulation, (Notes 2, 3) 100 µA≤IL≤100 mA 0.1 0.4 %
Dropout Voltage (VIN - VOUT) IL=100µ A 50 80 mV
Dropout Voltage (VIN - VOUT) IL=100 mA 380 450 mV
Current Limit VOUT=0 160 200 mA
Output Voltage TC (VOUT TC) (Note 10) (Note 4) 50 ppm/°C
Reference Voltage TC (VREF TC) 50 ppm/°C
Control Pin Current IL=100 µA 120 180 m A
Ground Pin Current IL=100 mA 8 12 mA
Output Noise Voltage 10Hz to 100KHz,CL=1µF, (Bypass=0.01 µF pins 7 to 1) 430 µV rms
Output Noise Voltage 10Hz to 100KHz,CL=200 µF, (Bypass=0.01 µF pins 7 to 1) 160 µV rms
Output Noise Voltage 10Hz to 100KHz,CL=13.3 µF, (Bypass=0.01 µF pins 7 to 1) 100 µV rms
Feedback Pin Bias Current 40 80 nA
Feedback Pin Bias Current Temperature Coefficient 0.1 nA/°C
Output Leakage Current VOH=42V 0.05 2 m A
Output Low Voltage VIN=4.5V, IOL=400µA 150 250 mV
Upper Threshold Voltage (Note 6) 40 60 mV
Lower Threshold Voltage (Note 6) 75 95 mV
Hysteresis (Note 6) 15 mV
Input logic Voltage Low (Regulator ON) 1.3 0.7 V
Input logic Voltage High (Regulator OFF) 2.5 V
Shutdown Pin Input Current VS=2.5V (Note 3) 30 60 m A
Shutdown Pin Input Current VS=42V (Note 3) 600 850 m A
Regulator Output Current in Shutdown (Note 3,9) 15 50 m A
Thermal Regulation (Note 11) 0.05 0.2 %/W
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the
device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the
Electrical Characteristics tables.
Note 2: Unless otherwise specified all limits guaranteed for VIN = ( VONOM +1)V, IL = 100 µA and CL = 1 µF. Limits appearing in boldface type apply over the
entire junction temperature range for operation. Limits appearing in normal type apply for TA = TJ = 25°C, VSHUTDOWN ≤ 0.8V.
Note 3: Guaranteed and 100% production tested.
Note 4: Guaranteed but not 100% production tested. These limits are not used to calculate outgoing AQL levels.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 100 mV below its nominal value measured at 1V
differential. At very low values of programmed output voltage, the minimum input supply voltage of 2V ( 2.3V over temperature) must be taken into account.
Note 6: Comparator thresholds are expressed in terms of a voltage differential at the feedback terminal below the nominal reference voltage measured at
VIN = ( VONOM +1)V. To express these thresholds in terms of output voltage change, multiply by the error amplifier gain = Vout/Vref = (R1 + R2)/R2. For
example, at a programmed output voltage of 5V, the error output is guaranteed to go low when the output drops by 95 mV x 5V/1.235 = 384 mV. Thresholds
remain constant as a percent of Vout as Vout is varied, with the dropout warning occurring at typically 5% below nominal, 7.5% guaranteed.
Note 7: Vref ≤Vout ≤ (Vin - 1V), 2.3 ≤Vin≤42V, 100µA≤IL≤ 100 mA, TJ ≤ TJMAX.
Note 8: The junction-to-ambient thermal resistance is 120°C/W for the molded plastic SO-8 (S), when the package is soldered directly to the PCB.
Note 9: VSHUTDOWN ≥ 2.5V, VIN ≤ 42V, VOUT =0.
Note 10: Output or reference voltage temperature coefficients defined as the worst case voltage change divided by the total temperature range.
Note 11: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line
regulation effects. Specifications are for a 50mA load pulse at VIN =42V (1.25W pulse) for T =10 ms.
Note 12: Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output voltage due to heating effects
are covered under the specification for thermal regulation.
Note 13: Line regulation is tested at 150°C for IL = 1 mA. For IL = 100 µA and TJ = 125°C, line regulation is guaranteed by design to 0.2%. See typical
performance characteristics for line regulation versus temperature and load current.
SPICE MODEL
Spice model pending.
CROSS REFERENCE PARTS: AMS Advanced Monolithic Systems AMS2942BS

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Package size Pads dimensions per drawing Backside
Silicon
Si
10±2 3.81x1.52mm
[150x60mils]
Gold Tin, Ni/Au, 5µm±1 thickness, solder reflow assembly Optional backside coating and/or marking.

LAYOUT / DIMENSIONS / PAD LOCATIONS
SMS2942BS AMS Advanced Monolithic Systems AMS2942BS AMS Advanced Monolithic Systems AMS2942BS HIGH VOLTAGE LOW DROPOUT REGULATOR SMS2942BS AMS2942BS HIGH VOLTAGE LOW DROPOUT REGULATOR
SOIC8 Package pinout
Pin # Function
1 Out
2 GND
3 GND
4 On/Off
5 Error
6 N/C
7 Feedback
8 In
SOIC8 SMS2942BS AMS Advanced Monolithic Systems AMS2942BS AMS Advanced Monolithic Systems AMS2942BS HIGH VOLTAGE LOW DROPOUT REGULATOR
nanoDFN SMS2942BS AMS Advanced Monolithic Systems AMS2942BS AMS Advanced Monolithic Systems AMS2942BS HIGH VOLTAGE LOW DROPOUT REGULATOR

APPLICATION HINTS

APPLICATION HINTS 


External Capacitors
A 1.0 µF or greater capacitor is required between output and ground for stability at output voltages of 5V or more. At lower output voltages, more
capacitance is required. Without this capacitor the part will oscillate. Most types of tantalum or aluminum electrolytic works fine here; even film types
work but are not recommended for reasons of cost. Many aluminum types have electrolytes that freeze at about -30°C, so solid tantalums are recommended for
operation below -25°C. The important parameters of the capacitor are an ESR of about 5 . or less and resonant frequency above 500 kHz parameters in the
value of the capacitor. The value of this capacitor may be increased without limit. At lower values of output current, less output capacitance is required
for stability. The capacitor can be reduced to 0.33 µF for currents below 10 mA or 0.1 µF for currents below 1 mA. At voltages below 5V the
error amplifier operates at lower gains so that more output capacitance is needed. For the worst-case situation of a 100mA load at 1.23V output (Output
shorted to Feedback) a 3.3µF (or greater) capacitor should be used. A 1µF tantalum or aluminum electrolytic capacitor should be placed between
input to ground if there is more than 10 inches of wire between the input and the AC filter capacitor or if a battery is used as the input. Stray
capacitance to Feedback terminal can cause instability. This may especially be a problem when using a higher value of external resistors to set the
output voltage. Adding a 100pF capacitor between Output and Feedback and increasing the output capacitor to at least 3.3 µF will fix this problem.

Error Detection Comparator Output
The comparator produces a logic low output whenever the output falls out of regulation by more than approximately 5%. This figure is the comparator’s
built-in offset of about 60 mV divided by the 1.235 reference voltage. This trip level remains 5% below normal regardless of the programmed output voltage.
For example, the error flag trip level is typically 4.75V for a 5V output or 11.4V for a 12V output. The out of regulation condition may be due either to
low input voltage, current limiting, or thermal limiting.
Figure 2 gives a timing diagram depicting the ERROR signal and the regulator output voltage as the AMS2942 input is ramped up and down. Since the dropout
voltage is load dependent the input voltage trip point will vary with the load current. The output voltage trip point does not vary with load. The error
comparator has an open­collector output which requires an external pullup resistor. This resistor may be returned to the output or some other supply voltage
depending on system requirements. In determining a value for this resistor, note that the output is rated to sink 400µA. Suggested values range from
100K to 1M. The resistor is not required if error flag terminal is unused.

Setting the Output Voltage
The AMS2942 it may be programmed for any output voltage between its 1.235V reference and its 42V maximum rating. As seen in Figure 1, an external pair of
resistors is required. The complete equation for the output voltage is:
Vout = VREF × (1 + R1/ R2)+ IfbR1
where VREF is the nominal 1.235 reference voltage and IFB is the feedback pin bias current, nominally -20nA. The minimum recommended load current of
1µA forces an upper limit of 1.2 M. on value of R2, if the regulator must work with no load (a condition often found in CMOS in standby) IFB will
produce a 2% typical error in VOUT which may be eliminated at room temperature by trimming R1. For better accuracy, choosing R2 = 100k reduces this error
to 0.17%.
Drive with TTL-high to shut down. Ground or leave if shutdown feature is not used. Note: Pins 2 and 6 are left open.

Reducing Output Noise
In reference applications it may be an advantageous to reduce the AC noise present at the output. One method is to reduce the regulator bandwidth by
increasing the size of the output capacitor. Noise could be reduced fourfold by a bypass capacitor across R1, since it reduces the high frequency gain
from 4 to unity. Pick CBYPASS=1/2piR1 × 200 Hz
or about 0.01 µF. When doing this, the output capacitor must be increased to 3.3 µF to maintain stability. These changes reduce the output
noise from 430 µV to 100 µV rms for a 100 kHz bandwidth at 5V output. With the bypass capacitor added, noise no longer scales with output
voltage so that improvements are more dramatic at higher output voltages.
Typical Application - Adjustable Output
Figure 1: Typical Application - Adjustable Output
Error Output Timing
Figure 2: Error Output Timing

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
SMX-nDFN - NanoDFN package is a very thin (10mils) proprietary wafer level chip size package W-CSP technology developed by Semiconix.
SMX-nDFN is the most efficient wafer level chip size package W-CSP designed for mixed surface mount and flip chip applications. The assembly process is same as for packaged surface mount components. The process consist of at least 3 steps; -screen print solder paste on the printed circuit board; -flip chip, align and attach to the tacky solder paste; -dry paste, reflow at >220°C, clean, etc.
SMX-nDFN packages can also be attached with conductive silver epoxy in low temperature applications. The assembly process is also very simple and inexpensive consisting of 3 steps: - transfer a thin conductive epoxy layer onto the bonding pads; -align to substrate and attach; -cure silver epoxy and inspect. SMX-nDFN packages are available in many sizes with landing pads compatible with the industry standard CSP as well as many surface mount packages.

STANDARD PRODUCTS ORDERING INFORMATION

VERSION SMX P/N WAFFLE PACKS QUANTITY U/P($) TAPE / REEL MIN QUANTITY U/P($)
nDFN-4 SMS2942BS-nDFN-4 -WP 1000 -TR 1000
nDFN-4 SMS2942BS-nDFN-4 -WP 5000 -TR 5000
SOIC8 SMS2942BS-SOIC8 -WP 1000 -TR 5000

PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.
LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times.
CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met.
CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page.
SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.
ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts.
SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF.

INSTANT QUOTE
Semiconix P/N Quantity E-mail    

DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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