SMX LM339 QUAD SINGLE SUPPLY COMPARATORS same as Texas Instruments LM339, manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. SMX LM339 QUAD SINGLE SUPPLY COMPARATORS same as Texas Instruments LM339, manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=LM339">INVENTORY /cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMXLM339&c_item_1=">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMX LM339 - BARE DIE GOLD CHIP TECHNOLOGY™ QUAD SINGLE SUPPLY COMPARATORS FEATURES APPLICATIONS QUAD SINGLE SUPPLY COMPARATORS Wide single supply 2.0V to 36V Dual supplies:±1.0V to ±18V Very low supply current drain (0.4 mA) independent of supply voltage In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS LM339 LM339 QUAD SINGLE SUPPLY COMPARATORS SMXLM339 QUAD SINGLE SUPPLY COMPARATORS - PRODUCT DESCRIPTION The SMX LM339 series are dual independent precision voltage comparators capable of single or split power supply operation. These devices are designed to permit a common mode range–to–ground level with single supply operation. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions. SCHEMATIC DIAGRAM LM339 Texas Instruments LM339 QUAD SINGLE SUPPLY COMPARATORS LM339 MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNITS Power Supply Voltages Vcc +36 or 18 Vdc Input Differential Voltage Range Vdir 32 Vdc Input Common Mode Voltage Range Vicmr -0.3 to VCC Vdc Output Short Circuit to Ground Isc Continuous Power dissipation TA = 25°C Derate Above 25°C PD 8 mW/°C Junction temperature Tj 150 °C Operating Ambient Temperature Range Topa 0 to +70 °C Storage Temperature Range Tstg -65 to +150 °C ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. LM339 ELECTRICAL CHARACTERISTIC VCC = +5.0 Vdc, TA = +25°C, unless otherwise specified PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Input Offset Voltage (Note1) VIO ±2.0 ±5.0 mVdc Input Bias Current (Note1, Note 2) IIB 25 250 nA Input Offset Current (Note 1) IIO ±5.0 ±5.0 nA Input Common Mode Voltage Range VICMR VCC-1.5 V Supply Current RL=¥, RL=¥, VCC = 30 Vdc ICC - - 0.8 1.0 2.0 2.5 mA Voltage Gain RL ≥15 k, VCC = 15 Vdc AVOL 50 200 V/mV Large Signal Response Time VI = TTL Logic Swing, Vref = 1.4 Vdc, VRL = 5.0 Vdc, RL = 5.1 kW - 300 ns Response Time (Note 6) VRL = 5.0 Vdc, RL = 5.1 kW - 1.3 µs Output Sink Current VI (-)≥+1.0 Vdc, VI(+) = 0,VO≤1.5 Vdc ISINK 6 16 mA Saturation Voltage VI(-)≥+1.0 Vdc, VI(+) = 0, Isink≤4.0 mA Vsat 130 400 mV Output Leakage Current VI(+)≥+1.0 Vdc, VI(-) = 0, VO = +5.0 Vdc IOL 0.1 nA (NOTE 1)At the output switch point, V O 1.4 Vdc, RS £ 100 5.0 Vdc £ VCC £ 30 Vdc, with the inputs over the full common mode range (0 Vdc to VCC 1.5 Vdc). (NOTE 2)The bias current flows out of the inputs due to the PNP input stage. This current is virtually constant, independent of the output state. SPICE MODEL CROSS REFERENCE PARTS GENERAL DIE INFORMATION Substrate Thickness [mils] Die size mils [mm] Bonding pads Backside metallization Silicon 10 61.024 x 62.992 ±1 [1.55 x 1.6] 4.724x4.724 Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach. LM339 DIE LAYOUT - MECHANICAL SPECIFICATIONS LM339 DIE LAYOUT - MECHANICAL SPECIFICATIONS PAD # FUNCTION X(mils) X(mm) Y(mils) 1 OUT#1 0.105 4.134 0.718 2 OUT#2 0.105 4.134 0.333 3 VCC 0.105 4.134 0.11 4 IN-#2 0.48 18.898 0.11 5 IN+#2 0.99 38.976 0.11 6 IN-#1 1.325 52.165 0.11 7 IN+#1 1.325 52.165 0.53 8 IN-#3 1.325 52.165 0.949 9 IN+#3 1.325 52.165 1.369 10 IN-#4 0.99 38.976 1.369 11 IN+#4 0.48 18.898 1.369 12 GND 0.105 4.134 1.369 13 OUT#4 0.105 4.134 1.118 14 OUT#3 0.105 4.134 0.928 SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000. LM339 STANDARD PRODUCTS PRICE LIST USM PART # MINIMUM ORDER QUANTITY Waffle Packs U/P($) USMLM339 100pc -WP $3.20 Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES /cgi-bin/getpdf.pl?part=SMXLM339&idx=8">PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated: Display settings for best viewing: Current display settings: Page hits: Screen resolution: 1124x864 Screen resolution: Total site visits: Color quality: 16 bit Color quality: bit © 1990- SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission. Valid XHTML 1.0 Transitional by http://validator.w3.org

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semiconix semiconductor - where the future is today - gold chip technology SMX LM339 - BARE DIE
GOLD CHIP TECHNOLOGY™ QUAD SINGLE SUPPLY COMPARATORS

FEATURES APPLICATIONS QUAD SINGLE SUPPLY COMPARATORS
Wide single supply 2.0V to 36V
Dual supplies:±1.0V to ±18V
Very low supply current drain (0.4 mA) independent of supply voltage






In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS









LM339 LM339 QUAD SINGLE SUPPLY COMPARATORS

SMXLM339 QUAD SINGLE SUPPLY COMPARATORS - PRODUCT DESCRIPTION
The SMX LM339 series are dual independent precision voltage comparators capable of single or split power supply operation. These devices are designed to permit a common mode range–to–ground level with single supply operation.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS
Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions.


SCHEMATIC DIAGRAM
LM339 Texas Instruments LM339 QUAD SINGLE SUPPLY COMPARATORS

LM339 MAXIMUM RATINGS
PARAMETERSYMBOLVALUEUNITS
Power Supply VoltagesVcc+36 or 18Vdc
Input Differential Voltage RangeVdir32Vdc
Input Common Mode Voltage RangeVicmr-0.3 to VCCVdc
Output Short Circuit to Ground IscContinuous 
Power dissipation TA = 25°C Derate Above 25°CPD8mW/°C
Junction temperatureTj150°C
Operating Ambient Temperature RangeTopa0 to +70°C
Storage Temperature RangeTstg-65 to +150°C
ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

LM339 ELECTRICAL CHARACTERISTIC
VCC = +5.0 Vdc, TA = +25°C, unless otherwise specified
PARAMETERTEST CONDITIONSSYMBOLMINTYPMAXUNITS
Input Offset Voltage (Note1)VIO±2.0±5.0mVdc
Input Bias Current (Note1, Note 2)IIB25250nA
Input Offset Current (Note 1)IIO±5.0±5.0nA
Input Common Mode Voltage RangeVICMRVCC-1.5V
Supply CurrentRL=¥, RL=¥, VCC = 30 VdcICC- -0.8 1.02.0 2.5mA
Voltage GainRL ≥15 k, VCC = 15 VdcAVOL50200V/mV
Large Signal Response TimeVI = TTL Logic Swing, Vref = 1.4 Vdc, VRL = 5.0 Vdc, RL = 5.1 kW-300ns
Response Time (Note 6)VRL = 5.0 Vdc, RL = 5.1 kW-1.3µs
Output Sink CurrentVI (-)≥+1.0 Vdc, VI(+) = 0,VO≤1.5 VdcISINK616mA
Saturation VoltageVI(-)≥+1.0 Vdc, VI(+) = 0, Isink≤4.0 mAVsat130400mV
Output Leakage CurrentVI(+)≥+1.0 Vdc, VI(-) = 0, VO = +5.0 VdcIOL0.1nA
(NOTE 1)At the output switch point, V O 1.4 Vdc, RS £ 100 5.0 Vdc £ VCC £ 30 Vdc, with the inputs over the full common mode range (0 Vdc to VCC 1.5 Vdc).
(NOTE 2)The bias current flows out of the inputs due to the PNP input stage. This current is virtually constant, independent of the output state.

SPICE MODEL
Spice model pending.
 
CROSS REFERENCE PARTS

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Die size
mils [mm]
Bonding pads Backside metallization
Silicon 10 61.024 x 62.992 ±1
[1.55 x 1.6]
4.724x4.724 Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach.

LM339 DIE LAYOUT - MECHANICAL SPECIFICATIONSLM339 DIE LAYOUT - MECHANICAL SPECIFICATIONS
PAD #FUNCTIONX(mils)X(mm)Y(mils)
1OUT#10.1054.1340.718
2OUT#20.1054.1340.333
3VCC0.1054.1340.11
4IN-#20.4818.8980.11
5IN+#20.9938.9760.11
6IN-#11.32552.1650.11
7IN+#11.32552.1650.53
8IN-#31.32552.1650.949
9IN+#31.32552.1651.369
10IN-#40.9938.9761.369
11IN+#40.4818.8981.369
12GND0.1054.1341.369
13OUT#40.1054.1341.118
14OUT#30.1054.1340.928

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization.
For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au.
For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used.
In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended.
IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000.

LM339 STANDARD PRODUCTS PRICE LIST
USM PART #MINIMUM ORDER QUANTITYWaffle PacksU/P($)
USMLM339100pc-WP$3.20
Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.
List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting SEMICONIX SEMICONDUCTOR technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.

INSTANT QUOTE
Semiconix P/N Quantity E-mail    

DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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